摘要
In this study, investigation of Schottky junctions based on oxygen-/fluorine-terminated (100) diamond (O-/F-diamond) film has been carried out. Both of the O-/F-diamond surfaces have been formed on different areas of one (100) diamond sample by O2 and CF4 plasma. Metals of Au, Pd, and Cu have been evaporated on the diamond surfaces to form Schottky junctions, whose barrier heights on O-/F-diamond have been investigated by X-ray photoelectron spectroscopy technique, the results of which indicate that the barrier heights of the metals on O-diamond are about 1.70 eV, and those on F-diamond are about 2.30 eV, respectively.
| 源语言 | 英语 |
|---|---|
| 页(从-至) | 180-185 |
| 页数 | 6 |
| 期刊 | Diamond and Related Materials |
| 卷 | 63 |
| DOI | |
| 出版状态 | 已出版 - 1 3月 2016 |
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