Wafer−Scale Growth of Fe−Doped Hexagonal Boron Nitride (hBN) Films via Co−Sputtering

Qiang Li; Qifan Zhang; Ransheng Chen; Haoran Zhang; Mingdi Wang; Jingping Zhu; Xiaoliang Wang; Yuhuai Liu; Feng Yun

doi:10.3390/cryst12060777

Wafer−Scale Growth of Fe−Doped Hexagonal Boron Nitride (hBN) Films via Co−Sputtering

Qiang Li
, Qifan Zhang
, Ransheng Chen
, Haoran Zhang
, Mingdi Wang
, Jingping Zhu
, Xiaoliang Wang
, Yuhuai Liu
, Feng Yun

电子与信息学部

Xi'an Jiaotong University
CAS - Institute of Semiconductors
Zhengzhou University
Nagoya University

科研成果: 期刊稿件 › 文章 › 同行评审

5 引用（Scopus）

摘要

Fe−doped hBN film has great potential for use in spintronic applications. The wafer scale preparation of Fe−doped hBN films and their material properties are crucial for application in devices. In this work, Fe−doped films with 2−inch wafer scale were fabricated by magnetron co−sputtering, and the properties of the films were characterized. The crystal quality decreased, but the electrical performance was greatly improved. The average square resistance of Fe−doped film was 0.34 KΩ/sqr. Meanwhile, the Fe−doped films kept the characteristics of hBN well. The wavelength of absorption edge was 216 nm, and the corresponding optical band gap of 5.76 eV.

源语言	英语
文章编号	777
期刊	Crystals
卷	12
期	6
DOI	https://doi.org/10.3390/cryst12060777
出版状态	已出版 - 6月 2022

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title = "Wafer−Scale Growth of Fe−Doped Hexagonal Boron Nitride (hBN) Films via Co−Sputtering",

abstract = "Fe−doped hBN film has great potential for use in spintronic applications. The wafer scale preparation of Fe−doped hBN films and their material properties are crucial for application in devices. In this work, Fe−doped films with 2−inch wafer scale were fabricated by magnetron co−sputtering, and the properties of the films were characterized. The crystal quality decreased, but the electrical performance was greatly improved. The average square resistance of Fe−doped film was 0.34 KΩ/sqr. Meanwhile, the Fe−doped films kept the characteristics of hBN well. The wavelength of absorption edge was 216 nm, and the corresponding optical band gap of 5.76 eV.",

keywords = "Fe doping film, hexagonal boron nitride, magnetron sputtering",

author = "Qiang Li and Qifan Zhang and Ransheng Chen and Haoran Zhang and Mingdi Wang and Jingping Zhu and Xiaoliang Wang and Yuhuai Liu and Feng Yun",

note = "Publisher Copyright: {\textcopyright} 2022 by the authors. Licensee MDPI, Basel, Switzerland.",

year = "2022",

month = jun,

doi = "10.3390/cryst12060777",

language = "英语",

volume = "12",

journal = "Crystals",

issn = "2073-4352",

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number = "6",

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TY - JOUR

T1 - Wafer−Scale Growth of Fe−Doped Hexagonal Boron Nitride (hBN) Films via Co−Sputtering

AU - Li, Qiang

AU - Zhang, Qifan

AU - Chen, Ransheng

AU - Zhang, Haoran

AU - Wang, Mingdi

AU - Zhu, Jingping

AU - Wang, Xiaoliang

AU - Liu, Yuhuai

AU - Yun, Feng

PY - 2022/6

Y1 - 2022/6

N2 - Fe−doped hBN film has great potential for use in spintronic applications. The wafer scale preparation of Fe−doped hBN films and their material properties are crucial for application in devices. In this work, Fe−doped films with 2−inch wafer scale were fabricated by magnetron co−sputtering, and the properties of the films were characterized. The crystal quality decreased, but the electrical performance was greatly improved. The average square resistance of Fe−doped film was 0.34 KΩ/sqr. Meanwhile, the Fe−doped films kept the characteristics of hBN well. The wavelength of absorption edge was 216 nm, and the corresponding optical band gap of 5.76 eV.

AB - Fe−doped hBN film has great potential for use in spintronic applications. The wafer scale preparation of Fe−doped hBN films and their material properties are crucial for application in devices. In this work, Fe−doped films with 2−inch wafer scale were fabricated by magnetron co−sputtering, and the properties of the films were characterized. The crystal quality decreased, but the electrical performance was greatly improved. The average square resistance of Fe−doped film was 0.34 KΩ/sqr. Meanwhile, the Fe−doped films kept the characteristics of hBN well. The wavelength of absorption edge was 216 nm, and the corresponding optical band gap of 5.76 eV.

KW - Fe doping film

KW - hexagonal boron nitride

KW - magnetron sputtering

UR - https://www.scopus.com/pages/publications/85131352019

U2 - 10.3390/cryst12060777

DO - 10.3390/cryst12060777

M3 - 文章

AN - SCOPUS:85131352019

SN - 2073-4352

VL - 12

JO - Crystals

JF - Crystals

IS - 6

M1 - 777

ER -

Wafer−Scale Growth of Fe−Doped Hexagonal Boron Nitride (hBN) Films via Co−Sputtering

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