Wafer-scale room-temperature bonding between silicon and ceramic wafers by means of argon-beam surface activation

H. Takagi; R. Maeda; T. Suga

Wafer-scale room-temperature bonding between silicon and ceramic wafers by means of argon-beam surface activation

H. Takagi
, R. Maeda
, T. Suga

National Institute of Advanced Industrial Science and Technology

科研成果: 会议稿件 › 论文 › 同行评审

8 引用（Scopus）

摘要

A room-temperature wafer bonding method between dissimilar materials is developed. 4-inch Si wafers and 3 or 4-inch ceramic wafers are bonded in vacuum after surface sputter etching by Ar beam. Strong bonding equivalent to bulk material is achieved by room-temperature process. The method enables the bonding between dissimilar materials regardless the thermal expansion mismatch and crystal lattice mismatch. In addition, it also realizes very low damage bonding because it does not require any heating process and external load to force two specimens together.

源语言	英语
页	60-63
页数	4
出版状态	已出版 - 2001
已对外发布	是
活动	14th IEEE International Conference on Micro Electro Mechanical Systems (MEMS 2001) - Interlaken, 瑞士期限: 21 1月 2001 → 25 1月 2001

会议

会议	14th IEEE International Conference on Micro Electro Mechanical Systems (MEMS 2001)
国家/地区	瑞士
市	Interlaken
时期	21/01/01 → 25/01/01

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引用此

@conference{5d24cb2a5633496cbda9dc8f3d1d5138,

title = "Wafer-scale room-temperature bonding between silicon and ceramic wafers by means of argon-beam surface activation",

abstract = "A room-temperature wafer bonding method between dissimilar materials is developed. 4-inch Si wafers and 3 or 4-inch ceramic wafers are bonded in vacuum after surface sputter etching by Ar beam. Strong bonding equivalent to bulk material is achieved by room-temperature process. The method enables the bonding between dissimilar materials regardless the thermal expansion mismatch and crystal lattice mismatch. In addition, it also realizes very low damage bonding because it does not require any heating process and external load to force two specimens together.",

author = "H. Takagi and R. Maeda and T. Suga",

year = "2001",

language = "英语",

pages = "60--63",

note = "14th IEEE International Conference on Micro Electro Mechanical Systems (MEMS 2001) ; Conference date: 21-01-2001 Through 25-01-2001",

}

TY - CONF

T1 - Wafer-scale room-temperature bonding between silicon and ceramic wafers by means of argon-beam surface activation

AU - Takagi, H.

AU - Maeda, R.

AU - Suga, T.

PY - 2001

Y1 - 2001

N2 - A room-temperature wafer bonding method between dissimilar materials is developed. 4-inch Si wafers and 3 or 4-inch ceramic wafers are bonded in vacuum after surface sputter etching by Ar beam. Strong bonding equivalent to bulk material is achieved by room-temperature process. The method enables the bonding between dissimilar materials regardless the thermal expansion mismatch and crystal lattice mismatch. In addition, it also realizes very low damage bonding because it does not require any heating process and external load to force two specimens together.

AB - A room-temperature wafer bonding method between dissimilar materials is developed. 4-inch Si wafers and 3 or 4-inch ceramic wafers are bonded in vacuum after surface sputter etching by Ar beam. Strong bonding equivalent to bulk material is achieved by room-temperature process. The method enables the bonding between dissimilar materials regardless the thermal expansion mismatch and crystal lattice mismatch. In addition, it also realizes very low damage bonding because it does not require any heating process and external load to force two specimens together.

UR - https://www.scopus.com/pages/publications/0035006989

M3 - 论文

AN - SCOPUS:0035006989

SP - 60

EP - 63

T2 - 14th IEEE International Conference on Micro Electro Mechanical Systems (MEMS 2001)

Y2 - 21 January 2001 through 25 January 2001

ER -

Wafer-scale room-temperature bonding between silicon and ceramic wafers by means of argon-beam surface activation

摘要

会议

其它文件与链接

学术指纹

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