Vertical Au/ZnO Schottky Barrier Diode Based on High-Resistivity ZnO Film for X-Ray Dose Measurement

Leidang Zhou; Xiaolong Zhao; Liang Chen; Zhiyong Huang; Yongning He; Xiaoping Ouyang

doi:10.1109/TNS.2019.2922727

Vertical Au/ZnO Schottky Barrier Diode Based on High-Resistivity ZnO Film for X-Ray Dose Measurement

Leidang Zhou
, Xiaolong Zhao
, Liang Chen
, Zhiyong Huang
, Yongning He
, Xiaoping Ouyang

Xi'an Jiaotong University
Northwest Institute of Nuclear Technology

科研成果: 期刊稿件 › 文章 › 同行评审

15 引用（Scopus）

摘要

Vertical Au/ZnO Schottky barrier diodes (SBDs) were fabricated on an n⁺ Si substrate and tested as X-ray detectors in this paper. The high-resistivity ZnO film-based SBDs had a large effective area about 0.78 cm² and showed a notable sensitivity about 0.78 uC/Gy for X-ray illumination. The detector with linear outputs achieved an X-ray dose measurement across four orders of magnitude of the dose rate from 3.83 mGy/s to 19.00 Gy/s. The response current to switched X-ray illumination exhibited a repeatable and stable characteristic, and the response current mechanism was given and discussed. The results imply the potential of junction devices based on ZnO material for X-ray dose measurement.

源语言	英语
文章编号	8736359
页（从-至）	1916-1920
页数	5
期刊	IEEE Transactions on Nuclear Science
卷	66
期	7
DOI	https://doi.org/10.1109/TNS.2019.2922727
出版状态	已出版 - 7月 2019
已对外发布	是

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title = "Vertical Au/ZnO Schottky Barrier Diode Based on High-Resistivity ZnO Film for X-Ray Dose Measurement",

abstract = "Vertical Au/ZnO Schottky barrier diodes (SBDs) were fabricated on an n+ Si substrate and tested as X-ray detectors in this paper. The high-resistivity ZnO film-based SBDs had a large effective area about 0.78 cm2 and showed a notable sensitivity about 0.78 uC/Gy for X-ray illumination. The detector with linear outputs achieved an X-ray dose measurement across four orders of magnitude of the dose rate from 3.83 mGy/s to 19.00 Gy/s. The response current to switched X-ray illumination exhibited a repeatable and stable characteristic, and the response current mechanism was given and discussed. The results imply the potential of junction devices based on ZnO material for X-ray dose measurement.",

keywords = "Schottky diodes, X-ray dose measurement, zinc compounds",

author = "Leidang Zhou and Xiaolong Zhao and Liang Chen and Zhiyong Huang and Yongning He and Xiaoping Ouyang",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2019",

month = jul,

doi = "10.1109/TNS.2019.2922727",

language = "英语",

volume = "66",

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journal = "IEEE Transactions on Nuclear Science",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - Vertical Au/ZnO Schottky Barrier Diode Based on High-Resistivity ZnO Film for X-Ray Dose Measurement

AU - Zhou, Leidang

AU - Zhao, Xiaolong

AU - Chen, Liang

AU - Huang, Zhiyong

AU - He, Yongning

AU - Ouyang, Xiaoping

PY - 2019/7

Y1 - 2019/7

N2 - Vertical Au/ZnO Schottky barrier diodes (SBDs) were fabricated on an n+ Si substrate and tested as X-ray detectors in this paper. The high-resistivity ZnO film-based SBDs had a large effective area about 0.78 cm2 and showed a notable sensitivity about 0.78 uC/Gy for X-ray illumination. The detector with linear outputs achieved an X-ray dose measurement across four orders of magnitude of the dose rate from 3.83 mGy/s to 19.00 Gy/s. The response current to switched X-ray illumination exhibited a repeatable and stable characteristic, and the response current mechanism was given and discussed. The results imply the potential of junction devices based on ZnO material for X-ray dose measurement.

AB - Vertical Au/ZnO Schottky barrier diodes (SBDs) were fabricated on an n+ Si substrate and tested as X-ray detectors in this paper. The high-resistivity ZnO film-based SBDs had a large effective area about 0.78 cm2 and showed a notable sensitivity about 0.78 uC/Gy for X-ray illumination. The detector with linear outputs achieved an X-ray dose measurement across four orders of magnitude of the dose rate from 3.83 mGy/s to 19.00 Gy/s. The response current to switched X-ray illumination exhibited a repeatable and stable characteristic, and the response current mechanism was given and discussed. The results imply the potential of junction devices based on ZnO material for X-ray dose measurement.

KW - Schottky diodes

KW - X-ray dose measurement

KW - zinc compounds

UR - https://www.scopus.com/pages/publications/85069792721

U2 - 10.1109/TNS.2019.2922727

DO - 10.1109/TNS.2019.2922727

M3 - 文章

AN - SCOPUS:85069792721

SN - 0018-9499

VL - 66

SP - 1916

EP - 1920

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

IS - 7

M1 - 8736359

ER -

Vertical Au/ZnO Schottky Barrier Diode Based on High-Resistivity ZnO Film for X-Ray Dose Measurement

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