TY - GEN
T1 - Understanding of DC degradation of ZnO varistor ceramics from the aspect of high-temperature relaxation
AU - Wu, Kangning
AU - Huang, Yuwei
AU - Xin, Lei
AU - Li, Jianying
AU - Li, Shengtao
AU - Liu, Wenfeng
N1 - Publisher Copyright:
© 2018 IEEE.
PY - 2018/6/29
Y1 - 2018/6/29
N2 - A high-temperature dielectric relaxation which neatly correlated with the behavior of dc degradation in ZnO varistor ceramics was released from intense dc conduction in traditional dielectric spectroscopy using an improved methodology. High-temperature dielectric relaxation, which was commonly covered by intense dc conduction in traditional dielectric spectroscopy, was clearly exhibited in an improved dielectric spectroscopy correlating with the behavior of dc degradation in ZnO varistor ceramics. It was suggested that the newly detected dielectric relaxation arose from the capture and emission of electrons by interface states in Schottky barriers at grain boundaries. Its activation energy, which represented the energy level under the bottom of the conduction band, was found to gradually decrease from 1.01 eV to 0.89 eV with dc degradation. Neutralization of negatively charged interface states with positively charged migrating zinc interstitials and desorption of oxygen at grain boundaries were responsible for the continuous reduction of its activation energy.
AB - A high-temperature dielectric relaxation which neatly correlated with the behavior of dc degradation in ZnO varistor ceramics was released from intense dc conduction in traditional dielectric spectroscopy using an improved methodology. High-temperature dielectric relaxation, which was commonly covered by intense dc conduction in traditional dielectric spectroscopy, was clearly exhibited in an improved dielectric spectroscopy correlating with the behavior of dc degradation in ZnO varistor ceramics. It was suggested that the newly detected dielectric relaxation arose from the capture and emission of electrons by interface states in Schottky barriers at grain boundaries. Its activation energy, which represented the energy level under the bottom of the conduction band, was found to gradually decrease from 1.01 eV to 0.89 eV with dc degradation. Neutralization of negatively charged interface states with positively charged migrating zinc interstitials and desorption of oxygen at grain boundaries were responsible for the continuous reduction of its activation energy.
UR - https://www.scopus.com/pages/publications/85049853906
U2 - 10.1109/ICPADM.2018.8401225
DO - 10.1109/ICPADM.2018.8401225
M3 - 会议稿件
AN - SCOPUS:85049853906
T3 - Proceedings of the IEEE International Conference on Properties and Applications of Dielectric Materials
SP - 231
EP - 234
BT - ICPADM 2018 - 12th International Conference on the Properties and Applications of Dielectric Materials
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 12th International Conference on the Properties and Applications of Dielectric Materials, ICPADM 2018
Y2 - 20 May 2018 through 24 May 2018
ER -