TY - JOUR
T1 - Ultralight and Resilient Bicontinuous Si3N4/SiC Nanowire Network for Tunable and Highly Efficient Electromagnetic Wave Absorption in Extreme Conditions
AU - Cai, Zhixin
AU - Su, Lei
AU - Niu, Min
AU - Wang, Lei
AU - Ni, Zhentao
AU - Wang, Hongjie
AU - Peng, Kang
AU - Zhuang, Lei
N1 - Publisher Copyright:
© 2022 Wiley-VCH GmbH.
PY - 2022/12/12
Y1 - 2022/12/12
N2 - Developing tunable and highly efficient electromagnetic wave (EMW) absorbers with low density is crucial for the development of wireless telecommunications devices in extreme conditions. SiC ceramic has received much attention because of its dielectric tenability, low density, and chemical stability. However, the present SiC-based materials usually show limited EMW absorbing performance than they are expected. Herein, an ultralight and resilient bicontinuous Si3N4/SiC network (8 mg cm−3) composed of EMW-transparent Si3N4 microbelts and EMW-absorption SiC nanowires is designed and prepared to achieve improved impedance matching and EMW attenuation capacity. The optimized bicontinuous network exhibits a broad effective absorption bandwidth of 8.62 GHz and a strong RLmin of −52.31 dB. Furthermore, the resulting bicontinuous Si3N4/SiC network, with thickness of 6 mm, shows a tunable absorption bandwidth ranging from 5.36 to 18 GHz by resilient action. It also exhibits excellent thermal stability (up to 1000 °C), thermal shock resistance (from −196 to 900 °C), and thermal insulation performance (32 Mw m−1 K−1), enabling it to be an ideal candidate for EMW absorption in extreme environments.
AB - Developing tunable and highly efficient electromagnetic wave (EMW) absorbers with low density is crucial for the development of wireless telecommunications devices in extreme conditions. SiC ceramic has received much attention because of its dielectric tenability, low density, and chemical stability. However, the present SiC-based materials usually show limited EMW absorbing performance than they are expected. Herein, an ultralight and resilient bicontinuous Si3N4/SiC network (8 mg cm−3) composed of EMW-transparent Si3N4 microbelts and EMW-absorption SiC nanowires is designed and prepared to achieve improved impedance matching and EMW attenuation capacity. The optimized bicontinuous network exhibits a broad effective absorption bandwidth of 8.62 GHz and a strong RLmin of −52.31 dB. Furthermore, the resulting bicontinuous Si3N4/SiC network, with thickness of 6 mm, shows a tunable absorption bandwidth ranging from 5.36 to 18 GHz by resilient action. It also exhibits excellent thermal stability (up to 1000 °C), thermal shock resistance (from −196 to 900 °C), and thermal insulation performance (32 Mw m−1 K−1), enabling it to be an ideal candidate for EMW absorption in extreme environments.
KW - SiC nanowires
KW - bicontinuous networks
KW - extreme conditions
KW - resilient
KW - tunable electromagnetic wave absorption
UR - https://www.scopus.com/pages/publications/85140480283
U2 - 10.1002/admi.202201553
DO - 10.1002/admi.202201553
M3 - 文章
AN - SCOPUS:85140480283
SN - 2196-7350
VL - 9
JO - Advanced Materials Interfaces
JF - Advanced Materials Interfaces
IS - 35
M1 - 2201553
ER -