TY - JOUR
T1 - Two-Dimensional SnSe Composited with One-Dimensional Mn Nanowires
T2 - A Promising Thermoelectric with Ultrahigh Power Factor
AU - Li, Y. F.
AU - Tang, G. H.
AU - Fu, Bo
AU - Zhang, Min
AU - Zhao, Xin
N1 - Publisher Copyright:
Copyright © 2020 American Chemical Society.
PY - 2020/9/28
Y1 - 2020/9/28
N2 - Two-dimensional (2D) SnSe is a promising candidate for thermoelectric applications. In this work, we have explored an optimization strategy for thermoelectric conversion in two-dimensional monolayer SnSe by compositing with one-dimensional (1D) Mn nanowires. The thermoelectric properties were investigated using the first-principles theory calculation combined with the Boltzmann transport theory. The proposed 2D-1D composite structure can regulate the band gap and the degeneracy by changing the distance between 1D Mn nanowires. It was found that the carrier mobility can be increased to a maximum of 8143.26 cm2 V-1 s-1 at 300 K due to the reduced electron-phonon scattering effect. In addition, high band degeneracy and high carrier mobility lead to an ultrahigh power factor of 200 μW cm-1 K-2 in 3Mn-SnSe at 300 K, which can compensate for the negative effect of high electronic thermal conductivity. As a result, record high ZT values from 0.73 at 200 K to 3.78 at 650 K are achieved in 3Mn-SnSe, 39.2% larger than the ZT values of the pristine monolayer SnSe on average. This work presents an effective structural modification strategy to optimize the thermoelectric performance of 2D SnSe, with the potential of extension to other low-dimensional thermoelectric materials.
AB - Two-dimensional (2D) SnSe is a promising candidate for thermoelectric applications. In this work, we have explored an optimization strategy for thermoelectric conversion in two-dimensional monolayer SnSe by compositing with one-dimensional (1D) Mn nanowires. The thermoelectric properties were investigated using the first-principles theory calculation combined with the Boltzmann transport theory. The proposed 2D-1D composite structure can regulate the band gap and the degeneracy by changing the distance between 1D Mn nanowires. It was found that the carrier mobility can be increased to a maximum of 8143.26 cm2 V-1 s-1 at 300 K due to the reduced electron-phonon scattering effect. In addition, high band degeneracy and high carrier mobility lead to an ultrahigh power factor of 200 μW cm-1 K-2 in 3Mn-SnSe at 300 K, which can compensate for the negative effect of high electronic thermal conductivity. As a result, record high ZT values from 0.73 at 200 K to 3.78 at 650 K are achieved in 3Mn-SnSe, 39.2% larger than the ZT values of the pristine monolayer SnSe on average. This work presents an effective structural modification strategy to optimize the thermoelectric performance of 2D SnSe, with the potential of extension to other low-dimensional thermoelectric materials.
KW - Boltzmann transport theory
KW - density functional theory
KW - first-principles
KW - monolayer SnSe
KW - thermoelectric materials
UR - https://www.scopus.com/pages/publications/85094827936
U2 - 10.1021/acsaem.0c01591
DO - 10.1021/acsaem.0c01591
M3 - 文章
AN - SCOPUS:85094827936
SN - 2574-0962
VL - 3
SP - 9234
EP - 9245
JO - ACS Applied Energy Materials
JF - ACS Applied Energy Materials
IS - 9
ER -