摘要
Memristors are considered the best candidates for nonvolatile memory and advanced computing technologies, and polymer and two-dimensional (2D) materials have been developed as functional layer materials in memristors with high-performance resistive switching characteristics. In this work, a polymer memristor with a graphene (Gr)-doped poly(vinyl alcohol) (PVA) composite acting as the functional layer was prepared. The memristor device exhibited superior performance with good retention and a comparatively large ON/OFF ratio at room temperature. Additionally, excellent logic operations were achieved. These satisfactory properties can be attributed to trap-induced carrier trapping and detrapping. In addition, the device exhibited stable bipolar resistive switching behavior over a moderate temperature range. This work provides insight into the transmission mechanism of polymer-based memristors and the reasons why they become unstable at high temperatures, demonstrating the potential applications of PVA-Gr-based polymer memristors as logic circuit units in integrated chips and artificial intelligence.
| 源语言 | 英语 |
|---|---|
| 页(从-至) | 2477-2488 |
| 页数 | 12 |
| 期刊 | ACS Applied Materials and Interfaces |
| 卷 | 16 |
| 期 | 2 |
| DOI | |
| 出版状态 | 已出版 - 17 1月 2024 |
学术指纹
探究 'Transmission Mechanism and Logical Operation of Graphene-Doped Poly(vinyl alcohol) Composite-Based Memristor' 的科研主题。它们共同构成独一无二的学术指纹。引用此
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