Transfer process of LT-GaAs epitaxial films for on-chip terahertz antenna integrated device

Chun Yan Guo; Jian Xing Xu; Hong Ling Peng; Hai Qiao Ni; Tao Wang; Jin Shou Tian; Zhi Chuan Niu; Zhao Xin Wu; Jian Zuo; Cun Lin Zhang

doi:10.11972/j.issn.1001-9014.2017.02.016

Transfer process of LT-GaAs epitaxial films for on-chip terahertz antenna integrated device

Chun Yan Guo
, Jian Xing Xu
, Hong Ling Peng
, Hai Qiao Ni
, Tao Wang
, Jin Shou Tian
, Zhi Chuan Niu
, Zhao Xin Wu
, Jian Zuo
, Cun Lin Zhang

电子与信息学部

CAS - Xi'an Institute of Optics and Precision Mechanics
Xi'an Jiaotong University
University of Chinese Academy of Sciences
CAS - Institute of Semiconductors
Capital Normal University

科研成果: 期刊稿件 › 文章 › 同行评审

5 引用（Scopus）

摘要

A process for LT-GaAs used as photoconductive switch in epitaxial layer transfer of on-chip THz antenna integrated device was provided. Hall indicated resistivity of the epitaxial materials gained by MBE was about 10⁶Ω·cm. HNO₃-NH₄OH-H₂O-C₃H₈O₇·H₂O-H₂O₂-HCl and wet chemical etching were used to etch epitaxial materials grown by MBE. Gained the structure that 1.5μm LT-GaAs bounded with COP after lift-off of SI-GaAs and Al_0.9Ga_0.1As. AFM, SEM and high-power microscope indicated that the structure was flat and smooth after lift-off. RMS=2.28 nm. EDAX indicated there wasn't Al in this structure. It can be used to make photoconductive switch.

源语言	英语
页（从-至）	220-224 and 234
期刊	Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves
卷	36
期	2
DOI	https://doi.org/10.11972/j.issn.1001-9014.2017.02.016
出版状态	已出版 - 1 4月 2017

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title = "Transfer process of LT-GaAs epitaxial films for on-chip terahertz antenna integrated device",

abstract = "A process for LT-GaAs used as photoconductive switch in epitaxial layer transfer of on-chip THz antenna integrated device was provided. Hall indicated resistivity of the epitaxial materials gained by MBE was about 106Ω·cm. HNO3-NH4OH-H2O-C3H8O7·H2O-H2O2-HCl and wet chemical etching were used to etch epitaxial materials grown by MBE. Gained the structure that 1.5μm LT-GaAs bounded with COP after lift-off of SI-GaAs and Al0.9Ga0.1As. AFM, SEM and high-power microscope indicated that the structure was flat and smooth after lift-off. RMS=2.28 nm. EDAX indicated there wasn't Al in this structure. It can be used to make photoconductive switch.",

keywords = "Epitaxial layer transfer, LT-GaAs, On-chip THz antenna integrated device, Wet chemical etching",

author = "Guo, \{Chun Yan\} and Xu, \{Jian Xing\} and Peng, \{Hong Ling\} and Ni, \{Hai Qiao\} and Tao Wang and Tian, \{Jin Shou\} and Niu, \{Zhi Chuan\} and Wu, \{Zhao Xin\} and Jian Zuo and Zhang, \{Cun Lin\}",

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doi = "10.11972/j.issn.1001-9014.2017.02.016",

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TY - JOUR

T1 - Transfer process of LT-GaAs epitaxial films for on-chip terahertz antenna integrated device

AU - Guo, Chun Yan

AU - Xu, Jian Xing

AU - Peng, Hong Ling

AU - Ni, Hai Qiao

AU - Wang, Tao

AU - Tian, Jin Shou

AU - Niu, Zhi Chuan

AU - Wu, Zhao Xin

AU - Zuo, Jian

AU - Zhang, Cun Lin

PY - 2017/4/1

Y1 - 2017/4/1

N2 - A process for LT-GaAs used as photoconductive switch in epitaxial layer transfer of on-chip THz antenna integrated device was provided. Hall indicated resistivity of the epitaxial materials gained by MBE was about 106Ω·cm. HNO3-NH4OH-H2O-C3H8O7·H2O-H2O2-HCl and wet chemical etching were used to etch epitaxial materials grown by MBE. Gained the structure that 1.5μm LT-GaAs bounded with COP after lift-off of SI-GaAs and Al0.9Ga0.1As. AFM, SEM and high-power microscope indicated that the structure was flat and smooth after lift-off. RMS=2.28 nm. EDAX indicated there wasn't Al in this structure. It can be used to make photoconductive switch.

AB - A process for LT-GaAs used as photoconductive switch in epitaxial layer transfer of on-chip THz antenna integrated device was provided. Hall indicated resistivity of the epitaxial materials gained by MBE was about 106Ω·cm. HNO3-NH4OH-H2O-C3H8O7·H2O-H2O2-HCl and wet chemical etching were used to etch epitaxial materials grown by MBE. Gained the structure that 1.5μm LT-GaAs bounded with COP after lift-off of SI-GaAs and Al0.9Ga0.1As. AFM, SEM and high-power microscope indicated that the structure was flat and smooth after lift-off. RMS=2.28 nm. EDAX indicated there wasn't Al in this structure. It can be used to make photoconductive switch.

KW - Epitaxial layer transfer

KW - LT-GaAs

KW - On-chip THz antenna integrated device

KW - Wet chemical etching

UR - https://www.scopus.com/pages/publications/85019961464

U2 - 10.11972/j.issn.1001-9014.2017.02.016

DO - 10.11972/j.issn.1001-9014.2017.02.016

M3 - 文章

AN - SCOPUS:85019961464

SN - 1001-9014

VL - 36

SP - 220-224 and 234

JO - Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves

JF - Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves

IS - 2

ER -

Transfer process of LT-GaAs epitaxial films for on-chip terahertz antenna integrated device

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