@inproceedings{ccbe8beea80145439a9c64cd12f80855,
title = "Toward High Performance 4H-SiC MOSFETs Using Low Temperature Annealing Process with Supercritical Fluid",
abstract = "An annealing process at 120°C with supercritical fluid (SCF) is proved to be highly efficient in improving the quality 4H-SiC/SiO2 in MOSFET devices. The peak field-effect mobility of the fabricated lateral 4H-SiC MOSFET on (0001) Si face was improved to 72.3 cm2/V. s, which is about twice as much as the state-of-the-art results of post oxidation annealing process in the mostly used nitrogen-oxide atmosphere. The low temperature avoids the re-oxidation and material decomposing issues of high temperature. As a result, the reliability of the dielectric layer is significantly enhanced. What's inspiring is that the proposed efficient low temperature annealing process is compatible with the standard 4H-SiC MOSFET fabrication process.",
author = "Menghua Wang and Mingchao Yang and Weihua Liu and Songquan Yang and Chuanyu Han and Li Geng and Yue Hao",
note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 2021 IEEE International Electron Devices Meeting, IEDM 2021 ; Conference date: 11-12-2021 Through 16-12-2021",
year = "2021",
doi = "10.1109/IEDM19574.2021.9720636",
language = "英语",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "36.2.1--36.2.4",
booktitle = "2021 IEEE International Electron Devices Meeting, IEDM 2021",
}