TY - JOUR
T1 - Thermal-electrical-force Properties of Liquid Crystalline Epoxy for High-voltage High-power IGBT Potting Application
AU - Wang, Zhengdong
AU - Liu, Chenxin
AU - Yang, Ganqiu
AU - Liu, Botao
AU - Shen, Jiayi
AU - Cheng, Yonghong
N1 - Publisher Copyright:
© 2025 Chin.Soc.for Elec.Eng.
PY - 2025/10/5
Y1 - 2025/10/5
N2 - As the insulated gate bipolar transistor (IGBT) continues to evolve toward high-power and high-voltage operation, the device is faced with the risk of temperature overheating, breakdown failures, material ruptures, and other failures inside the device. In order to meet the increasingly harsh operating environment of the IGBT, there is an urgent need to develop a high-performance liquid crystalline epoxy potting material. In this paper, a biphenyl-type liquid crystal epoxy 4,4-biphenyldiglycidyl ether (BP) is prepared, and the effect laws of curing temperature and co-mingled bisphenol A epoxy system (EB-BP%) on the electrical insulating properties and thermo-mechanical properties of BP are explored. The results show that BP with sulfonamide (SAA) exhibits a distinct spherical liquid crystalline domain morphology at a curing temperature of 170℃ (BS-170), and the thermal conductivity (λ) and breakdown field strength (Eb) of BS-170 are 0.397 W·m-1·K-1and 47.403 kV·mm-1, respectively, which are 67.5% and 6% higher than those of bisphenol A epoxy. The λ of EB-30 in the blended system of BP and bisphenol A epoxy reaches 0.301 W·m-1·K-1, which is 28.6% higher than that of bisphenol A epoxy. In addition, EB-30 exhibits excellent tensile strength and elongation at break. Therefore, BP/EB shows better overall performance when used as an IGBT encapsulation material. This study can provide effective ideas and theoretical basis for the development of new high-performance insulating materials for IGBT encapsulation.
AB - As the insulated gate bipolar transistor (IGBT) continues to evolve toward high-power and high-voltage operation, the device is faced with the risk of temperature overheating, breakdown failures, material ruptures, and other failures inside the device. In order to meet the increasingly harsh operating environment of the IGBT, there is an urgent need to develop a high-performance liquid crystalline epoxy potting material. In this paper, a biphenyl-type liquid crystal epoxy 4,4-biphenyldiglycidyl ether (BP) is prepared, and the effect laws of curing temperature and co-mingled bisphenol A epoxy system (EB-BP%) on the electrical insulating properties and thermo-mechanical properties of BP are explored. The results show that BP with sulfonamide (SAA) exhibits a distinct spherical liquid crystalline domain morphology at a curing temperature of 170℃ (BS-170), and the thermal conductivity (λ) and breakdown field strength (Eb) of BS-170 are 0.397 W·m-1·K-1and 47.403 kV·mm-1, respectively, which are 67.5% and 6% higher than those of bisphenol A epoxy. The λ of EB-30 in the blended system of BP and bisphenol A epoxy reaches 0.301 W·m-1·K-1, which is 28.6% higher than that of bisphenol A epoxy. In addition, EB-30 exhibits excellent tensile strength and elongation at break. Therefore, BP/EB shows better overall performance when used as an IGBT encapsulation material. This study can provide effective ideas and theoretical basis for the development of new high-performance insulating materials for IGBT encapsulation.
KW - insulating properties
KW - liquid crystalline epoxy
KW - thermal conductivity
KW - thermodynamic properties
UR - https://www.scopus.com/pages/publications/105026340675
U2 - 10.13334/j.0258-8013.pcsee.241217
DO - 10.13334/j.0258-8013.pcsee.241217
M3 - 文章
AN - SCOPUS:105026340675
SN - 0258-8013
VL - 45
SP - 7798
EP - 7809
JO - Zhongguo Dianji Gongcheng Xuebao/Proceedings of the Chinese Society of Electrical Engineering
JF - Zhongguo Dianji Gongcheng Xuebao/Proceedings of the Chinese Society of Electrical Engineering
IS - 19
ER -