Theoretical prediction of carrier mobility in two-dimension GaN-SiS vdW heterostructure

The advancement of nanoelectronics necessitates two-dimensional (2D) materials with balanced carrier mobility and suitable bandgaps. This study presents a comprehensive theoretical analysis of the intrinsic electron and hole mobilities in 2D GaN-SiS van der Waals (vdW) heterostructure. Results reveal that its electronic performance (along the y-axis) exceeds that of 2D GaN-ZnO, 2D GaN-MoS₂, and 2D GaN-WS₂. Conversely, its intrinsic hole mobility is significantly lower than those of these 2D GaN vdW heterostructures. These findings demonstrate that the heterostructure's electronic properties can be selectively tuned through structural engineering. The dramatic hole mobility inhibition, coupled with high electron mobility, positions 2D GaN-SiS as a promising electron-transporting material, particularly enabling the assembly of electron-transporting systems with a specific conduction direction (the y-axis in this case).