@inproceedings{d7206edcaa084473b32e371e8a5955e1,
title = "The Suppression Mechanism of Parasitic Capacitance for Comb Capacitor Fabricated with Silicon-On-Insulation",
abstract = "This paper establishes theoretical circuit and electrostatic current multi-physical field simulation models for a typical comb capacitor fabricated with silicon-on-insulation. The influence of related electrical parameters and conditions on equivalent capacitance is revealed by analytical solution and simulation, and several methods are proposed to suppress the interference of parasitic capacitance on ideal capacitance, such as high-resistivity substrate Si, relatively high-frequency excitation, and grounded substrate Si. The models and methods proposed in this paper can provide theoretical guidance for the design and suppression of parasitic capacitance of MEMS (Micro-Electro-Mechanical System) capacitive sensors.",
keywords = "FEM, SOI, comb, parasitic capacitance",
author = "Renjie Tan and Juan Yang and Libo Zhao and Xiangguang Han and Wei Li and Yong Xia and Yi Gao and Chengying Wang and Zhuangde Jiang",
note = "Publisher Copyright: {\textcopyright} 2024 IEEE.; 19th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2024 ; Conference date: 02-05-2024 Through 05-05-2024",
year = "2024",
doi = "10.1109/NEMS60219.2024.10639546",
language = "英语",
series = "2024 IEEE 19th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2024",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2024 IEEE 19th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2024",
}