TY - JOUR
T1 - The rise of van der Waals multiferroic heterostructures
T2 - Interfacial physics and devices
AU - Zhao, Yihao
AU - Duan, Hongxu
AU - Min, Tai
AU - Li, Tao
N1 - Publisher Copyright:
© 2026 Chinese Physical Society and IOP Publishing Ltd. All rights, including for text and data mining, AI training, and similar technologies, are reserved. This article is available under the terms of the https://publishingsupport.iopscience.iop.org/iop-standard/v1.
PY - 2026/6
Y1 - 2026/6
N2 - Van der Waals (vdW) multiferroic heterostructures, formed by stacking two-dimensional (2D) ferroelectric and magnetic materials, have emerged as a highly promising platform for next-generation electronic devices. The atomically sharp, dangling-bond-free interfaces of these heterostructures, combined with unprecedented design freedom unrestricted by lattice-matching constraints, provide an ideal playground for exploring novel magnetoelectric phenomena. This review systematically surveys the fundamental progress, challenges, and future applications in this rapidly advancing field. We begin by examining the three key interfacial magnetoelectric coupling mechanisms that have been theoretically proposed: polarization-gated interfacial charge transfer, interfacial orbital hybridization, and polarization-modulated interfacial Dzyaloshinskii–Moriya interaction (DMI). Subsequently, we bridge theory and practice by reviewing pivotal experimental demonstrations, from initial proof-of-concept work in hybrid-dimensional systems and intrinsic-mechanism explorations in low-temperature all-vdW systems to the landmark breakthrough of non-volatile electrical control of magnetism at room temperature. Building on this physical foundation, we highlight the immense potential of this field for future device applications, focusing on three promising paradigms, including ultra-low-power memory and logic, brain-inspired neuromorphic computing, and topological spintronics based on the electrical manipulation of skyrmions. Finally, we conclude by summarizing current research bottlenecks and outlining key future directions to transition this promising field from fundamental research to tangible technology.
AB - Van der Waals (vdW) multiferroic heterostructures, formed by stacking two-dimensional (2D) ferroelectric and magnetic materials, have emerged as a highly promising platform for next-generation electronic devices. The atomically sharp, dangling-bond-free interfaces of these heterostructures, combined with unprecedented design freedom unrestricted by lattice-matching constraints, provide an ideal playground for exploring novel magnetoelectric phenomena. This review systematically surveys the fundamental progress, challenges, and future applications in this rapidly advancing field. We begin by examining the three key interfacial magnetoelectric coupling mechanisms that have been theoretically proposed: polarization-gated interfacial charge transfer, interfacial orbital hybridization, and polarization-modulated interfacial Dzyaloshinskii–Moriya interaction (DMI). Subsequently, we bridge theory and practice by reviewing pivotal experimental demonstrations, from initial proof-of-concept work in hybrid-dimensional systems and intrinsic-mechanism explorations in low-temperature all-vdW systems to the landmark breakthrough of non-volatile electrical control of magnetism at room temperature. Building on this physical foundation, we highlight the immense potential of this field for future device applications, focusing on three promising paradigms, including ultra-low-power memory and logic, brain-inspired neuromorphic computing, and topological spintronics based on the electrical manipulation of skyrmions. Finally, we conclude by summarizing current research bottlenecks and outlining key future directions to transition this promising field from fundamental research to tangible technology.
KW - magnetoelectric coupling
KW - multiferroics
KW - spintronics
KW - two-dimensional materials
KW - Van der Waals heterostructures
UR - https://www.scopus.com/pages/publications/105043532639
U2 - 10.1088/1674-1056/ae3e73
DO - 10.1088/1674-1056/ae3e73
M3 - 文献综述
AN - SCOPUS:105043532639
SN - 1674-1056
VL - 35
JO - Chinese Physics B
JF - Chinese Physics B
IS - 6
M1 - 067501
ER -