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The Reliability of Press-pack IGBT in MMC Based on Electro-Thermo-Mechanical Simulation

  • Xi'an Jiaotong University

科研成果: 书/报告/会议事项章节会议稿件同行评审

4 引用 (Scopus)

摘要

Press-pack IGBTs are now widely used in HVDC and FACTS since its extraordinary reliability and high power density. A method to estimate the reliability of press-pack IGBT based on FEM is proposed. A circuit model of MMC was simulated by Simplorer in order to obtain the power loss model of press-pack IGBT. The coupled steady-state simulation of thermal, electrical and mechanical model was analyzed by Workbench. Furthermore, the transient junction swing of IGBT was estimated by a power loss with half sine profile. LESIT lifetime prediction model was used to analyze the lifetime and reliability of press-pack IGBT in MMC system. Press-pack IGBT has high reliability in MMC in long time scale since the low junction temperature of it.

源语言英语
主期刊名2020 17th China International Forum on Solid State Lighting and 2020 International Forum on Wide Bandgap Semiconductors China, SSLChina
主期刊副标题IFWS 2020
出版商Institute of Electrical and Electronics Engineers Inc.
266-270
页数5
ISBN(电子版)9780738111889
DOI
出版状态已出版 - 23 11月 2020
活动17th China International Forum on Solid State Lighting and 2020 International Forum on Wide Bandgap Semiconductors China, SSLChina: IFWS 2020 - Shenzhen, 中国
期限: 23 11月 202025 11月 2020

出版系列

姓名2020 17th China International Forum on Solid State Lighting and 2020 International Forum on Wide Bandgap Semiconductors China, SSLChina: IFWS 2020

会议

会议17th China International Forum on Solid State Lighting and 2020 International Forum on Wide Bandgap Semiconductors China, SSLChina: IFWS 2020
国家/地区中国
Shenzhen
时期23/11/2025/11/20

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