The multiscale ion-driven interfacial reconstruction governing dielectric charging and discharging behaviors

Ion-dielectric interactions play a critical role in determining the performance and reliability of dielectric materials within advanced electrical and plasma systems. This work systematically unveils the ion-driven interfacial reconstruction spanning from nanometer to micrometer scales, which is demonstrated effective governing dielectric surface charging and discharging behaviors. Ion irradiation induces preferential sputtering, amorphization, and ion implantation, resulting in reduced surface roughness, accumulation of oxygen vacancies, formation of a near-surface amorphous layer, and trapped Xe atoms. By leveraging these interfacial modifications, the dielectric charging and discharging behaviors can be effectively and stably regulated. The results demonstrate corresponding increases in trap state density, reductions in surface resistivity, and the dominant charging mode transition from secondary electron emission to Schottky injection. Both experimental measurements and numerical simulations consistently show a progressive decrease in surface discharge threshold with increasing irradiation durations (up to 37.4%), revealing the coupled effects of atomic-scale defect generation, nanoscale structural disorder, and microscopic interfacial electrical performance. This study establishes a generalized framework for tuning interfacial electrical responses via ion-driven reconstruction, providing generalizable insights for modulating ion-dielectric interactions in plasma applications.