The investigation of the near-field radiative heat transfer between thin film and semi-infinite body

The near-field radiative heat transfer between boron doped silicon (Si-19) thin film and semi-infinite body (Si-19 and SiC) at 100 nm vacuum gap is investigated for different film thickness. Result shows that when the semi-infinite body is Si-19 material, due to the excitation of the surface waves and these surface waves coupled with each other, the near-field radiative heat transfer with film thickness is complicated. When the semi-infinite body is SiC material, the couple of surface waves are destructed and the frequency band for high emissivity of the emitter and that for high absorptivity of receiver are not matched, resulting in decrease of the enhancement of the near-field radiative heat transfer due to excitation of surfaces. Thus in the same computation area, the radiative heat flux monotonously increases with increase of film thickness. Therefore, no extreme point is observed for this case.