The effects of xenon implantation in ceria with and without lanthanum

B. Ye; D. Yun; A. J. Oaks; W. Chen; M. A. Kirk; J. Rest; A. M. Yacout; J. F. Stubbins

doi:10.1016/j.nimb.2011.01.073

The effects of xenon implantation in ceria with and without lanthanum

B. Ye
, D. Yun
, A. J. Oaks
, W. Chen
, M. A. Kirk
, J. Rest
, A. M. Yacout
, J. F. Stubbins

University of Illinois at Urbana-Champaign
Argonne National Laboratory

科研成果: 期刊稿件 › 文章 › 同行评审

7 引用（Scopus）

摘要

A combination of in situ and ex situ transmission electron microscopy (TEM) experiments was used to study the evolution of defect clusters during implantation of Xe at the energy of 700 keV. Xenon has been implanted into CeO ₂ and Ce/LaO ₂ single crystal thin films up to doses of 1 × 10 ¹⁷ ions/cm ² at room temperature and 600 °C. The evolution of microstructure, especially the formation of solid-state precipitates, during irradiation is found to be a function of material composition, irradiation dose and irradiation temperature. The precipitates are either aggregated Xe in the solid state or metallic Ce due to the active redox reaction in CeO ₂ and Ce/LaO ₂. Further investigations with the help of X-ray techniques will be carried out in the future.

源语言	英语
页（从-至）	236-238
页数	3
期刊	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
卷	272
DOI	https://doi.org/10.1016/j.nimb.2011.01.073
出版状态	已出版 - 1 2月 2012
已对外发布	是

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title = "The effects of xenon implantation in ceria with and without lanthanum",

abstract = "A combination of in situ and ex situ transmission electron microscopy (TEM) experiments was used to study the evolution of defect clusters during implantation of Xe at the energy of 700 keV. Xenon has been implanted into CeO 2 and Ce/LaO 2 single crystal thin films up to doses of 1 {\texttimes} 10 17 ions/cm 2 at room temperature and 600 °C. The evolution of microstructure, especially the formation of solid-state precipitates, during irradiation is found to be a function of material composition, irradiation dose and irradiation temperature. The precipitates are either aggregated Xe in the solid state or metallic Ce due to the active redox reaction in CeO 2 and Ce/LaO 2. Further investigations with the help of X-ray techniques will be carried out in the future.",

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doi = "10.1016/j.nimb.2011.01.073",

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T1 - The effects of xenon implantation in ceria with and without lanthanum

AU - Ye, B.

AU - Yun, D.

AU - Oaks, A. J.

AU - Chen, W.

AU - Kirk, M. A.

AU - Rest, J.

AU - Yacout, A. M.

AU - Stubbins, J. F.

PY - 2012/2/1

Y1 - 2012/2/1

N2 - A combination of in situ and ex situ transmission electron microscopy (TEM) experiments was used to study the evolution of defect clusters during implantation of Xe at the energy of 700 keV. Xenon has been implanted into CeO 2 and Ce/LaO 2 single crystal thin films up to doses of 1 × 10 17 ions/cm 2 at room temperature and 600 °C. The evolution of microstructure, especially the formation of solid-state precipitates, during irradiation is found to be a function of material composition, irradiation dose and irradiation temperature. The precipitates are either aggregated Xe in the solid state or metallic Ce due to the active redox reaction in CeO 2 and Ce/LaO 2. Further investigations with the help of X-ray techniques will be carried out in the future.

AB - A combination of in situ and ex situ transmission electron microscopy (TEM) experiments was used to study the evolution of defect clusters during implantation of Xe at the energy of 700 keV. Xenon has been implanted into CeO 2 and Ce/LaO 2 single crystal thin films up to doses of 1 × 10 17 ions/cm 2 at room temperature and 600 °C. The evolution of microstructure, especially the formation of solid-state precipitates, during irradiation is found to be a function of material composition, irradiation dose and irradiation temperature. The precipitates are either aggregated Xe in the solid state or metallic Ce due to the active redox reaction in CeO 2 and Ce/LaO 2. Further investigations with the help of X-ray techniques will be carried out in the future.

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DO - 10.1016/j.nimb.2011.01.073

M3 - 文章

AN - SCOPUS:84655176366

SN - 0168-583X

VL - 272

SP - 236

EP - 238

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

ER -

The effects of xenon implantation in ceria with and without lanthanum

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