The effect of acceptor dopant on the memory effect of BaTiO3 ceramics

Wenfeng Liu; Yihang Jin; Yi Zhao; Fanyi Kong; Jinghan Gao; Lei Zhang; Shengtao Li

doi:10.1016/j.jallcom.2022.167182

The effect of acceptor dopant on the memory effect of BaTiO₃ ceramics

Wenfeng Liu
, Yihang Jin
, Yi Zhao
, Fanyi Kong
, Jinghan Gao
, Lei Zhang
, Shengtao Li

电气工程学院

Xi'an Jiaotong University

科研成果: 期刊稿件 › 文章 › 同行评审

4 引用（Scopus）

摘要

In the present study, BaTi_(1-x)M_xO₃ (x = 0.005, 0.01, 0.015; M is Mn, Fe, and Co) ceramics were prepared by the conventional solid-state reaction method. Four distinct and independently addressed memory states were experimentally obtained based on the double hysteresis loop, which was achieved by acceptor doping in BaTiO₃ ceramics. Moreover, this study indicated that for acceptor-doped BaTiO₃ ceramics, larger electronegativity and smaller ionic radius of acceptor ions benefitted the more significant memory effect and better fatigue resistance. All these results could provide a promising solution for multi-state memory applications.

源语言	英语
文章编号	167182
期刊	Journal of Alloys and Compounds
卷	928
DOI	https://doi.org/10.1016/j.jallcom.2022.167182
出版状态	已出版 - 20 12月 2022

访问文件

10.1016/j.jallcom.2022.167182

其它文件与链接

链接到 Scopus 的出版物

引用此

@article{56a54d2051fa4ca892e641736040a30f,

title = "The effect of acceptor dopant on the memory effect of BaTiO3 ceramics",

abstract = "In the present study, BaTi(1-x)MxO3 (x = 0.005, 0.01, 0.015; M is Mn, Fe, and Co) ceramics were prepared by the conventional solid-state reaction method. Four distinct and independently addressed memory states were experimentally obtained based on the double hysteresis loop, which was achieved by acceptor doping in BaTiO3 ceramics. Moreover, this study indicated that for acceptor-doped BaTiO3 ceramics, larger electronegativity and smaller ionic radius of acceptor ions benefitted the more significant memory effect and better fatigue resistance. All these results could provide a promising solution for multi-state memory applications.",

keywords = "Acceptor-doping, BaTiO ceramics, Fatigue resistance, Memory effect",

author = "Wenfeng Liu and Yihang Jin and Yi Zhao and Fanyi Kong and Jinghan Gao and Lei Zhang and Shengtao Li",

note = "Publisher Copyright: {\textcopyright} 2022",

year = "2022",

month = dec,

day = "20",

doi = "10.1016/j.jallcom.2022.167182",

language = "英语",

volume = "928",

journal = "Journal of Alloys and Compounds",

issn = "0925-8388",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - The effect of acceptor dopant on the memory effect of BaTiO3 ceramics

AU - Liu, Wenfeng

AU - Jin, Yihang

AU - Zhao, Yi

AU - Kong, Fanyi

AU - Gao, Jinghan

AU - Zhang, Lei

AU - Li, Shengtao

PY - 2022/12/20

Y1 - 2022/12/20

N2 - In the present study, BaTi(1-x)MxO3 (x = 0.005, 0.01, 0.015; M is Mn, Fe, and Co) ceramics were prepared by the conventional solid-state reaction method. Four distinct and independently addressed memory states were experimentally obtained based on the double hysteresis loop, which was achieved by acceptor doping in BaTiO3 ceramics. Moreover, this study indicated that for acceptor-doped BaTiO3 ceramics, larger electronegativity and smaller ionic radius of acceptor ions benefitted the more significant memory effect and better fatigue resistance. All these results could provide a promising solution for multi-state memory applications.

AB - In the present study, BaTi(1-x)MxO3 (x = 0.005, 0.01, 0.015; M is Mn, Fe, and Co) ceramics were prepared by the conventional solid-state reaction method. Four distinct and independently addressed memory states were experimentally obtained based on the double hysteresis loop, which was achieved by acceptor doping in BaTiO3 ceramics. Moreover, this study indicated that for acceptor-doped BaTiO3 ceramics, larger electronegativity and smaller ionic radius of acceptor ions benefitted the more significant memory effect and better fatigue resistance. All these results could provide a promising solution for multi-state memory applications.

KW - Acceptor-doping

KW - BaTiO ceramics

KW - Fatigue resistance

KW - Memory effect

UR - https://www.scopus.com/pages/publications/85138056613

U2 - 10.1016/j.jallcom.2022.167182

DO - 10.1016/j.jallcom.2022.167182

M3 - 文章

AN - SCOPUS:85138056613

SN - 0925-8388

VL - 928

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

M1 - 167182

ER -

The effect of acceptor dopant on the memory effect of BaTiO3 ceramics

摘要

访问文件

其它文件与链接

学术指纹

引用此

The effect of acceptor dopant on the memory effect of BaTiO₃ ceramics