TY - JOUR
T1 - The γ-Ray TID Effect and Irradiation Damage Recovery on β-Ga2O3/Al2O3 MOSCAPs
AU - Li, Song
AU - Yang, Mingchao
AU - Zhou, Leidang
AU - Chen, Liang
AU - Zhang, Silong
AU - Wang, Fangbao
AU - Wen, Zhang
AU - Yang, Songquan
AU - Li, Ming
AU - Liu, Weihao
AU - Geng, Li
AU - Hao, Yue
AU - Ouyang, Xiaoping
N1 - Publisher Copyright:
© 1963-2012 IEEE.
PY - 2025
Y1 - 2025
N2 - In this study, the impact of ɣ-ray total ionizing dose (TID) irradiation on the electrical performance of beta-gallium oxide (β -Ga2O3)/Al2O3 MOSCAPs was investigated, and a new irradiation damage recovery method was also proposed using the supercritical N2O (SCN2O) fluid postoxidation annealing (POA) process. After a cumulative ɣ -ray dose of 1.108 Mrad (SiO2), the net carrier concentration (Nd) decreased by 28.7%, and the interface state density (Dit) increased from 4.41 × 1011 to 5.12 × 1011 eV-1 cm-2 , according to the frequency-dependent capacitance-voltage (C–V) measurements. Meanwhile, the effective trapped charge density (Neff) was reduced from - 1.82 × 1012 to - 1.37 × 1012 eV-1 cm-2 , leading to a decreased flat-band voltage (Vfb), which was attributed to the formation of positively charged oxide trapped charge (Not). What is more, the forward leakage current density increased by ten times, and a 9.5% decrease in the breakdown voltage (Vbr) was observed according to the current-voltage (I–V) measurements. Moreover, the leakage current analysis indicated that the changes in the I–V characteristics were primarily caused by variations in Dit and Not . In addition, after the SCN2O POA process at 120 ℃, the damages of the irradiated device can be repaired. Specifically, the material properties, such as Nd , Dit , and Neff , and the electrical properties of Vbr and the forward leakage current density recovered to the preirradiation level. The results demonstrated that the low-temperature SCN2O POA process is promising for repairing TID irradiation damage in β -Ga2O3/Al2O3 . devices.
AB - In this study, the impact of ɣ-ray total ionizing dose (TID) irradiation on the electrical performance of beta-gallium oxide (β -Ga2O3)/Al2O3 MOSCAPs was investigated, and a new irradiation damage recovery method was also proposed using the supercritical N2O (SCN2O) fluid postoxidation annealing (POA) process. After a cumulative ɣ -ray dose of 1.108 Mrad (SiO2), the net carrier concentration (Nd) decreased by 28.7%, and the interface state density (Dit) increased from 4.41 × 1011 to 5.12 × 1011 eV-1 cm-2 , according to the frequency-dependent capacitance-voltage (C–V) measurements. Meanwhile, the effective trapped charge density (Neff) was reduced from - 1.82 × 1012 to - 1.37 × 1012 eV-1 cm-2 , leading to a decreased flat-band voltage (Vfb), which was attributed to the formation of positively charged oxide trapped charge (Not). What is more, the forward leakage current density increased by ten times, and a 9.5% decrease in the breakdown voltage (Vbr) was observed according to the current-voltage (I–V) measurements. Moreover, the leakage current analysis indicated that the changes in the I–V characteristics were primarily caused by variations in Dit and Not . In addition, after the SCN2O POA process at 120 ℃, the damages of the irradiated device can be repaired. Specifically, the material properties, such as Nd , Dit , and Neff , and the electrical properties of Vbr and the forward leakage current density recovered to the preirradiation level. The results demonstrated that the low-temperature SCN2O POA process is promising for repairing TID irradiation damage in β -Ga2O3/Al2O3 . devices.
KW - beta-gallium oxide (β-GaO)/AlO MOSCAPs
KW - interface state density
KW - oxide trapped charge
KW - supercritical NO fluid
KW - γ-ray total ionizing dose (TID) irradiation
UR - https://www.scopus.com/pages/publications/105003242872
U2 - 10.1109/TED.2025.3552361
DO - 10.1109/TED.2025.3552361
M3 - 文章
AN - SCOPUS:105003242872
SN - 0018-9383
VL - 72
SP - 2220
EP - 2225
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 5
ER -