Temperature dependent photoluminescence study of In_0.63Ga_0.37As/InP compressively strained single quantum wells

We report on photoluminescence study of In_0.63Ga_0.37As/InP compressively strained single quantum wells (CSSQWs) with differing well widths measured over temperatures ranging from 10K to 300K. it is found that the temperature dependence of the exciton energies of CSSQWs are similar to that of bulk material and are independent of the quantum well width. Doublets are observed for the 1nm well due to one monolayer fluctuation at the quantum well interface, showing that the sample has good quality. Considering the effects of alloy concentration, quantum size effect and coherent strain, the exciton transition energies are calculated. The calculated results are in good agreement with the experiment results.