Temperature-dependent energy storage properties of antiferroelectric Pb_0.96La_0.04Zr_0.98Ti_0.02O ₃ thin films

The energy storage properties of antiferroelectric (AFE) Pb _0.96La_0.04Zr_0.98Ti_0.02O₃ (PLZT 4/98/2) thin films were investigated as a function of temperature and applied electric field. The results indicated that recoverable energy density (U_re) and charge-discharge efficiency (η) of PLZT (4/98/2) depend weakly on temperature (from room temperature to 225 °C), while U _re increases linearly and η decreases exponentially with increasing electric field at room temperature. These findings are explained qualitatively on the basis of the kinetics of the temperature-induced transition of AFE-to-paraelectric phase and the field-induced transition of AFE-to-ferroelectric phase, respectively. The high U_re (≈61 J/cm³) and low leakage current density (≈3.5 × 10 ^-8 and 3.5 × 10^-5 A/cm² at 25 and 225 °C, respectively) indicate that antiferroelectric PLZT (4/98/2) is a promising material for high-power energy storage.