Temperature dependence of 1.2kV 4H-SiC schottky barrier diode for wide temperature applications

The robustness of 4H-SiC Schottky barrier diode (SBD) operating under extreme temperature conditions has become a critical issue for cryogenic and high temperature power conversion application. In this paper, the temperature dependence of static and dynamic performance for 1.2 kV 4HSiC SBD is systematically characterized over temperature range of 90 K to 478 K. Firstly, the forward characteristics (reverse characteristics) are characterized to evaluate the forward onstate performance (leakage current and block voltage) over above temperature range. Secondly, the reverse junction capacitance characterization is conducted to evaluate the capacitance stored energy during switching process. Moreover, a double pulse test circuit with layout optimization is used to characterize the reverse recovery performance, focusing on three key performance parameters (including reverse recovery peak current, reverse recovery charge and switching energy loss related with reverse recovery). The characterization results indicate the cryogenic temperature condition is more conducive to present the advantages of SiC SBD in high frequency power conversion system with high conversion efficiency.