TY - JOUR
T1 - Tailoring columnar defects landscape to enhance vortex pinning in commercial REBCO tapes via high-energy ion irradiation
AU - Zhao, Po
AU - Liu, Li
AU - Xin, Jijun
AU - Zhang, Zhuxin
AU - Wang, Jianqiang
AU - Bai, Dehu
AU - Su, Zhengxiong
AU - Wang, Wei
AU - Xue, Haizhou
AU - Liu, Jie
AU - Lu, Chenyang
AU - Gao, Rui
N1 - Publisher Copyright:
© 2026 Elsevier Ltd. All rights are reserved, including those for text and data mining, AI training, and similar technologies.
PY - 2026/8
Y1 - 2026/8
N2 - High-energy ion irradiation offers a promising route to engineer columnar vortex pinning landscapes in REBCO coated conductors, yet the relationship among electronic energy loss (Se), defect geometric characteristics and pinning mechanism remains insufficiently resolved. Here, GdBCO coated conductors were irradiated with 50 MeV and 80 MeV Xe ions to establish a consecutive Se window of ∼21-10 keV/nm within the superconducting layer. By combining SRIM simulations, multiscale microstructural characterization, and magnetic measurements, we directly correlate Se attenuation along the ion trajectory with a morphological evolution from continuous columnar defects (CDs) to segmented CDs and finally to spherical defects. Continuous CDs generated at higher Se create strong c-axis correlated pinning and improve high-field critical current density (Jc) retention, but excessive fluence promotes track overlap and severe lattice disorder, leading to degradation of critical transition temperature (Tc) and low-field Jc. In contrast, segmented CDs formed at moderate Se preserve superconducting percolation pathways while retaining effective correlated pinning. Quantitative analysis of CD segment length and inter-segment gap size, combined with a half-loop depinning model, demonstrates that defect geometry directly governs vortex depinning. This geometry-controlled pinning mechanism explains the broader high-field and high-temperature optimization window enabled by segmented-CD landscapes. These results establish energy-loss-mediated defect engineering as an effective strategy to optimize commercial REBCO tapes for targeted application requirements.
AB - High-energy ion irradiation offers a promising route to engineer columnar vortex pinning landscapes in REBCO coated conductors, yet the relationship among electronic energy loss (Se), defect geometric characteristics and pinning mechanism remains insufficiently resolved. Here, GdBCO coated conductors were irradiated with 50 MeV and 80 MeV Xe ions to establish a consecutive Se window of ∼21-10 keV/nm within the superconducting layer. By combining SRIM simulations, multiscale microstructural characterization, and magnetic measurements, we directly correlate Se attenuation along the ion trajectory with a morphological evolution from continuous columnar defects (CDs) to segmented CDs and finally to spherical defects. Continuous CDs generated at higher Se create strong c-axis correlated pinning and improve high-field critical current density (Jc) retention, but excessive fluence promotes track overlap and severe lattice disorder, leading to degradation of critical transition temperature (Tc) and low-field Jc. In contrast, segmented CDs formed at moderate Se preserve superconducting percolation pathways while retaining effective correlated pinning. Quantitative analysis of CD segment length and inter-segment gap size, combined with a half-loop depinning model, demonstrates that defect geometry directly governs vortex depinning. This geometry-controlled pinning mechanism explains the broader high-field and high-temperature optimization window enabled by segmented-CD landscapes. These results establish energy-loss-mediated defect engineering as an effective strategy to optimize commercial REBCO tapes for targeted application requirements.
KW - Columnar defects
KW - High-energy ion irradiation
KW - REBCO coated conductor
KW - Vortex pinning landscape
UR - https://www.scopus.com/pages/publications/105044497765
U2 - 10.1016/j.mtphys.2026.102162
DO - 10.1016/j.mtphys.2026.102162
M3 - 文章
AN - SCOPUS:105044497765
SN - 2542-5293
VL - 66
JO - Materials Today Physics
JF - Materials Today Physics
M1 - 102162
ER -