Synthesis of HgTe colloidal quantum dots for infrared photodetector

Subject to the complexity and high cost of traditional semiconductor materials and manufacturing processes, the features of facile solution process with low cost have made the colloidal quantum dots (CQDs) more competitive, in which HgTe nanocrystals can be tuned as a potential in infrared region and achieve a great photoresponsivity. Herein, we reported the synthesis and characterization of HgTe CQDs materials by a facile solution process, and explored the relationship between the nanocrystal size and the reaction temperature and time, as well as the effect of the ligand exchange on the thickness of the HgTe CQDs film. The as-fabricated photoconductive device showed a high photoresponse even under a weak light, which provides a direction for the next-generation infrared photodetectors.