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Switch-Off Mechanisms in GeAsTe Ovonic Threshold Switching Selector Device

  • Z. Hu
  • , Z. Chai
  • , W. Zhang
  • , Jian Zhang
  • Liverpool John Moores University

科研成果: 书/报告/会议事项章节会议稿件同行评审

摘要

Understanding the switching process in ovonic threshold switching (OTS) devices is an important research topic. Less attention has been paid to the fast switching-off process in the past, especially in modern nanoscale OTS devices. In this work, the OTS switching-off process in 1S1Rs operations are investigate. The underlying mechanisms can be explained by the dynamic resistance of OTS induced by the transition of defect clusters, and the impact of series resistance value on the switching off process is revealed. The defect cluster shrinking stage and rupture stage can be measured and characterized, respectively, which correspond to two distinct switch-off mechanisms. This research sheds new light on OTS switching mechanism and its impact on 1S1Rs operation.

源语言英语
主期刊名2024 IEEE 17th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2024
编辑Fan Ye, Xiaona Zhu, Ting Ao Tang
出版商Institute of Electrical and Electronics Engineers Inc.
ISBN(电子版)9798350361834
DOI
出版状态已出版 - 2024
活动17th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2024 - Zhuhai, 中国
期限: 22 10月 202425 10月 2024

出版系列

姓名2024 IEEE 17th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2024

会议

会议17th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2024
国家/地区中国
Zhuhai
时期22/10/2425/10/24

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