@inproceedings{be14518fec8648f8b2a0c4e3934cef27,
title = "Surface passivation of 1550nm AlxInyAsSb avalanche photodiode",
abstract = "We report three kinds of surface passivation for AlxInyAsSb APD, which are SiO2, SiO2 after sulfuration and SU8 2005 treatments. A good sidewall profile of mesas were etch by Inductively Coupled Plasma (ICP) to 2.6μm depth. The order of dark current for device with SU8 passivation is less than-12 under the temperature of 100K. Dark current and photocurrent increase linearly with diameter of mesa. Also, the devices with different passivation methods produce photocurrent excited by incident power. The measurements are consistent with CV modeling and electric field simulations.",
keywords = "AlxInyAsSb avalanche photodiode, Dark current, Photocurrent, Surface passivation",
author = "Chunyan Guo and Yuexi Lv and Da'nong Zheng and Yaoyao Sun and Zhi Jiang and Dongwei Jiang and Guowei Wang and Yingqiang Xu and Tao Wang and Jinshou Tian and Zhaoxin Wu and Zhichuan Niu",
note = "Publisher Copyright: {\textcopyright} 2018 SPIE.; Optoelectronic Devices and Integration VII 2018 ; Conference date: 11-10-2018 Through 13-10-2018",
year = "2018",
doi = "10.1117/12.2500523",
language = "英语",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
editor = "Changyuan Yu and Xuping Zhang and Baojun Li and Xinliang Zhang and Xinliang Zhang",
booktitle = "Optoelectronic Devices and Integration VII",
}