TY - GEN
T1 - Surface characterization of Cu/Ti thin films by fractal analysis
AU - Lin, Qijing
AU - Yang, Shuming
AU - Wang, Chenying
AU - Yuan, Guoying
AU - Chen, Wei
AU - Jing, Weixuan
AU - Jiang, Zhuangde
PY - 2012
Y1 - 2012
N2 - Copper/Titanium (Cu/Ti) metallic thin bilayer films, xCu/10nmTi/Si and xCu/30nmTi/Si (x=10nm, 20nm, 30nm, respectively), were deposited by DC magnetron sputtering technique. An atomic force microscopy (AFM) was used to measure the surface morphology. The height-height correlation function, described by the surface parameter of roughness exponent α, together with the evolutions of the familiar parameters of roughness w and autocorrelation length ξ, was used to describe the surface quantitatively. The fractal dimension D of the surface was calculated. The values of D reduce with the Cu film thickness increasing for the samples of Cu/10nmTi/Si and increase for the samples of Cu/30nmTi/Si. The surface will be rougher for the samples of Cu/10nmTi/Si as the Cu film increasing from 10nm to 30nm and become smoother for the samples of Cu/10nmTi/Si.
AB - Copper/Titanium (Cu/Ti) metallic thin bilayer films, xCu/10nmTi/Si and xCu/30nmTi/Si (x=10nm, 20nm, 30nm, respectively), were deposited by DC magnetron sputtering technique. An atomic force microscopy (AFM) was used to measure the surface morphology. The height-height correlation function, described by the surface parameter of roughness exponent α, together with the evolutions of the familiar parameters of roughness w and autocorrelation length ξ, was used to describe the surface quantitatively. The fractal dimension D of the surface was calculated. The values of D reduce with the Cu film thickness increasing for the samples of Cu/10nmTi/Si and increase for the samples of Cu/30nmTi/Si. The surface will be rougher for the samples of Cu/10nmTi/Si as the Cu film increasing from 10nm to 30nm and become smoother for the samples of Cu/10nmTi/Si.
UR - https://www.scopus.com/pages/publications/84869160161
U2 - 10.1109/NANO.2012.6322002
DO - 10.1109/NANO.2012.6322002
M3 - 会议稿件
AN - SCOPUS:84869160161
SN - 9781467321983
T3 - Proceedings of the IEEE Conference on Nanotechnology
BT - 2012 12th IEEE International Conference on Nanotechnology, NANO 2012
T2 - 2012 12th IEEE International Conference on Nanotechnology, NANO 2012
Y2 - 20 August 2012 through 23 August 2012
ER -