Study on the growth and characteristics of GSMBE of compressively strained In_0.63Ga_0.37As/InP quantum wells

The high-quality compressively-strained quantum-wells with different well-widths (1-11nm) were grown by using the home-made GSMBE system. By means of double crystal X-ray diffraction measurement and its computer simulation, the indium composition in the wells of the sample was determined. The sharp and intense peaks for each wells can be well resolved in the 10K PL spectra. For the wells narrower than 4nm, the line widths of the peaks are smaller than the theoretical values of line width broadening due to one monolayer interface fluctuation, which shows that the interface fluctuation of the sample is within one monolayer. For wells of 7nm and 9nm in width, the peak widths are as low as 4.5meV.