Study on modifying the simulation model and computing the key parameters of partial discharge in single void

Because the existing simulation model of partial discharge (PD) in the world cannot describe its physical inherence objectively, a modified simulation model of PD in a single void is proposed, and some key parameters of this model are determined. This modified model divides the void resistance into gas-gap resistance and interface resistance. The semi-conductive process of the interface resistance is introduced in this model. The time process of discharges and the process of electron avalanche are also considered. According to the physical inherence of PD, some key parameters are calculated approximately so that the simulation is much closer to the real discharge process of voids in insulation samples. These key parameters include the discharge inception voltage, the discharge extinction voltage, the equivalent resistance, and capacitance of a single void. The simulation results are different from the saw-tooth waves obtained by foreign researchers and are much similar to the measured waveforms, which is the foundation of further studies on the simulation of PD.