Study on GSMBE growth of InGaAs/InP superlattice materials

Dianzhao Sun; Xiaoliang Wang; Xiaobing Li; Hongxi Guo; Chunhui Yan; Jianping Li; Shirong Zhu; Lingxiao Li; Yiping Zen; Meiying Kong; Xun Hou

Study on GSMBE growth of InGaAs/InP superlattice materials

Dianzhao Sun
, Xiaoliang Wang
, Xiaobing Li
, Hongxi Guo
, Chunhui Yan
, Jianping Li
, Shirong Zhu
, Lingxiao Li
, Yiping Zen
, Meiying Kong
, Xun Hou

CAS - Institute of Semiconductors

科研成果: 期刊稿件 › 文章 › 同行评审

2 引用（Scopus）

摘要

This paper reports growth of InGaAs/InP nonstrained and strained layer superlattices with 40 periods on (100) InP substrates by GSMBE method using the first China-made CBE system. The samples have been characterized by high-resolution X-ray diffractometer, and In composition in the InGaAs well layer has been calculated. The results show that the superlattices have a high quality.

源语言	英语
页（从-至）	725-729
页数	5
期刊	Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
卷	16
期	11
出版状态	已出版 - 11月 1995
已对外发布	是

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title = "Study on GSMBE growth of InGaAs/InP superlattice materials",

abstract = "This paper reports growth of InGaAs/InP nonstrained and strained layer superlattices with 40 periods on (100) InP substrates by GSMBE method using the first China-made CBE system. The samples have been characterized by high-resolution X-ray diffractometer, and In composition in the InGaAs well layer has been calculated. The results show that the superlattices have a high quality.",

author = "Dianzhao Sun and Xiaoliang Wang and Xiaobing Li and Hongxi Guo and Chunhui Yan and Jianping Li and Shirong Zhu and Lingxiao Li and Yiping Zen and Meiying Kong and Xun Hou",

year = "1995",

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language = "英语",

volume = "16",

pages = "725--729",

journal = "Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors",

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TY - JOUR

T1 - Study on GSMBE growth of InGaAs/InP superlattice materials

AU - Sun, Dianzhao

AU - Wang, Xiaoliang

AU - Li, Xiaobing

AU - Guo, Hongxi

AU - Yan, Chunhui

AU - Li, Jianping

AU - Zhu, Shirong

AU - Li, Lingxiao

AU - Zen, Yiping

AU - Kong, Meiying

AU - Hou, Xun

PY - 1995/11

Y1 - 1995/11

N2 - This paper reports growth of InGaAs/InP nonstrained and strained layer superlattices with 40 periods on (100) InP substrates by GSMBE method using the first China-made CBE system. The samples have been characterized by high-resolution X-ray diffractometer, and In composition in the InGaAs well layer has been calculated. The results show that the superlattices have a high quality.

AB - This paper reports growth of InGaAs/InP nonstrained and strained layer superlattices with 40 periods on (100) InP substrates by GSMBE method using the first China-made CBE system. The samples have been characterized by high-resolution X-ray diffractometer, and In composition in the InGaAs well layer has been calculated. The results show that the superlattices have a high quality.

UR - https://www.scopus.com/pages/publications/0029404740

M3 - 文章

AN - SCOPUS:0029404740

SN - 0253-4177

VL - 16

SP - 725

EP - 729

JO - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

JF - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

IS - 11

ER -

Study on GSMBE growth of InGaAs/InP superlattice materials

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