Study of the interaction of highly charged ions with SiO2 surface

H. B. Peng; R. Cheng; X. Y. Yang; Y. C. Han; Y. T. ZHAO; J. Yang; S. W. Wang; Y. Fang; T. S. Wang

doi:10.1016/j.surfcoat.2009.02.029

Study of the interaction of highly charged ions with SiO₂ surface

H. B. Peng
, R. Cheng
, X. Y. Yang
, Y. C. Han
, Y. T. ZHAO
, J. Yang
, S. W. Wang
, Y. Fang
, T. S. Wang

Lanzhou University
CAS - Institute of Modern Physics

科研成果: 期刊稿件 › 文章 › 同行评审

2 引用（Scopus）

摘要

Highly charged ions (HCIs) Ar^q+/Pb^q+are extracted from ECR source and impacted on solid surface of SiO₂. Sputtering yield as a function of incident angle is measured by multi-channel plate (MCP). The results have been fitted by a new formula. We proposed the cooperation model to explain the formula. The results demonstrate that the potential assisted kinetic sputtering yield increases with the charge state and potential sputtering (PS) could be induced by impact of HCIs. At larger incident angles, the sputtering yield is dominated by elastic collision between HCIs and material atoms. It is found that, smaller the incident angle, larger the contribution from the potential sputtering.

源语言	英语
页（从-至）	2387-2389
页数	3
期刊	Surface and Coatings Technology
卷	203
期	17-18
DOI	https://doi.org/10.1016/j.surfcoat.2009.02.029
出版状态	已出版 - 15 6月 2009
已对外发布	是

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10.1016/j.surfcoat.2009.02.029

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title = "Study of the interaction of highly charged ions with SiO2 surface",

abstract = "Highly charged ions (HCIs) Arq+/Pbq+are extracted from ECR source and impacted on solid surface of SiO2. Sputtering yield as a function of incident angle is measured by multi-channel plate (MCP). The results have been fitted by a new formula. We proposed the cooperation model to explain the formula. The results demonstrate that the potential assisted kinetic sputtering yield increases with the charge state and potential sputtering (PS) could be induced by impact of HCIs. At larger incident angles, the sputtering yield is dominated by elastic collision between HCIs and material atoms. It is found that, smaller the incident angle, larger the contribution from the potential sputtering.",

keywords = "Highly charged ions (HCIs), Sputtering, Sputtering yield",

author = "Peng, \{H. B.\} and R. Cheng and Yang, \{X. Y.\} and Han, \{Y. C.\} and ZHAO, \{Y. T.\} and J. Yang and Wang, \{S. W.\} and Y. Fang and Wang, \{T. S.\}",

year = "2009",

month = jun,

day = "15",

doi = "10.1016/j.surfcoat.2009.02.029",

language = "英语",

volume = "203",

pages = "2387--2389",

journal = "Surface and Coatings Technology",

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publisher = "Elsevier B.V.",

number = "17-18",

}

TY - JOUR

T1 - Study of the interaction of highly charged ions with SiO2 surface

AU - Peng, H. B.

AU - Cheng, R.

AU - Yang, X. Y.

AU - Han, Y. C.

AU - ZHAO, Y. T.

AU - Yang, J.

AU - Wang, S. W.

AU - Fang, Y.

AU - Wang, T. S.

PY - 2009/6/15

Y1 - 2009/6/15

N2 - Highly charged ions (HCIs) Arq+/Pbq+are extracted from ECR source and impacted on solid surface of SiO2. Sputtering yield as a function of incident angle is measured by multi-channel plate (MCP). The results have been fitted by a new formula. We proposed the cooperation model to explain the formula. The results demonstrate that the potential assisted kinetic sputtering yield increases with the charge state and potential sputtering (PS) could be induced by impact of HCIs. At larger incident angles, the sputtering yield is dominated by elastic collision between HCIs and material atoms. It is found that, smaller the incident angle, larger the contribution from the potential sputtering.

AB - Highly charged ions (HCIs) Arq+/Pbq+are extracted from ECR source and impacted on solid surface of SiO2. Sputtering yield as a function of incident angle is measured by multi-channel plate (MCP). The results have been fitted by a new formula. We proposed the cooperation model to explain the formula. The results demonstrate that the potential assisted kinetic sputtering yield increases with the charge state and potential sputtering (PS) could be induced by impact of HCIs. At larger incident angles, the sputtering yield is dominated by elastic collision between HCIs and material atoms. It is found that, smaller the incident angle, larger the contribution from the potential sputtering.

KW - Highly charged ions (HCIs)

KW - Sputtering

KW - Sputtering yield

UR - https://www.scopus.com/pages/publications/65449135084

U2 - 10.1016/j.surfcoat.2009.02.029

DO - 10.1016/j.surfcoat.2009.02.029

M3 - 文章

AN - SCOPUS:65449135084

SN - 0257-8972

VL - 203

SP - 2387

EP - 2389

JO - Surface and Coatings Technology

JF - Surface and Coatings Technology

IS - 17-18

ER -

Study of the interaction of highly charged ions with SiO2 surface

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Study of the interaction of highly charged ions with SiO₂ surface