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Structures and dielectric properties of Bi1.5Zn 1.0Nb1.5O7 Cubic pyrochlore thin films prepared by pulsed laser deposition

  • Xiaohua Zhang
  • , Wei Ren
  • , Peng Shi
  • , Aifeng Tian
  • , Hong Xin
  • , Xiaofeng Chen
  • , Xiaoqing Wu
  • , Xi Yao
  • Xi'an Jiaotong University

科研成果: 书/报告/会议事项章节会议稿件同行评审

摘要

Structures and dielectric properties of cubic pyrochlore Bi 1.5Zn1.0Nb1.5O7 (BZN) thin films prepared by pulsed laser deposition process have been investigated. The results indicate that the deposition temperature has a significant effect on the structures and electrical properties of the BZN thin films. The films exhibit a cubic pyrochlore structure at a deposition temperature range from 550 °C to 700 °C and at an annealing temperature of 700 °C. The phases of Bi 2O3 and BiNbO4 and Bi5Nb 3O15 are detected due to the loss of Zn for the films deposited at 750 °C. The structures, surface morphologies, and dielectric properties of the BZN thin films have been investigated as a function of deposition temperature. The dielectric constant and loss tangent of the films deposited at 650 °C are 192 and 8×10-4 at 10 kHz, respectively.

源语言英语
主期刊名5th IMAPS/ACerS International Conference and Exhibition on Ceramic Interconnect and Ceramic Microsystems Technologies 2009, CICMT 2009
102-105
页数4
出版状态已出版 - 2009
活动5th International Conference on Ceramic Interconnect and Ceramic Microsystems Technologies, CICMT 2009 - Denver, CO, 美国
期限: 21 4月 200923 4月 2009

出版系列

姓名5th IMAPS/ACerS International Conference and Exhibition on Ceramic Interconnect and Ceramic Microsystems Technologies 2009, CICMT 2009

会议

会议5th International Conference on Ceramic Interconnect and Ceramic Microsystems Technologies, CICMT 2009
国家/地区美国
Denver, CO
时期21/04/0923/04/09

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