Structure and photoluminescence properties of SiC films synthesized by the RF-magnetron sputtering technique

Z. D. Sha; X. M. Wu; L. J. Zhuge

doi:10.1016/j.vacuum.2005.04.003

Structure and photoluminescence properties of SiC films synthesized by the RF-magnetron sputtering technique

Z. D. Sha
, X. M. Wu
, L. J. Zhuge

Soochow University

科研成果: 期刊稿件 › 文章 › 同行评审

60 引用（Scopus）

摘要

SiC films were prepared by the RF-magnetron sputtering technique on P-Si substrates with the target of single crystalline SiC. The as-deposited films were annealed in the temperature range of 700-1000 °C under nitrogen ambient. The thin films have been characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). The results showed that the samples were amorphous until they were annealed at 1000 °C. Annealing temperature (Ta) has an important role in the quality of the samples. The XPS data revealed the chemical state of the samples. Photoluminescence (PL) spectra of the samples were observed in the visible range at room temperature. The origin of the PL was discussed.

源语言	英语
页（从-至）	250-254
页数	5
期刊	Vacuum
卷	79
期	3-4
DOI	https://doi.org/10.1016/j.vacuum.2005.04.003
出版状态	已出版 - 19 8月 2005
已对外发布	是

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title = "Structure and photoluminescence properties of SiC films synthesized by the RF-magnetron sputtering technique",

abstract = "SiC films were prepared by the RF-magnetron sputtering technique on P-Si substrates with the target of single crystalline SiC. The as-deposited films were annealed in the temperature range of 700-1000 °C under nitrogen ambient. The thin films have been characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). The results showed that the samples were amorphous until they were annealed at 1000 °C. Annealing temperature (Ta) has an important role in the quality of the samples. The XPS data revealed the chemical state of the samples. Photoluminescence (PL) spectra of the samples were observed in the visible range at room temperature. The origin of the PL was discussed.",

keywords = "Annealing temperature, Magnetron sputtering, Photoluminescence, SiC films",

author = "Sha, \{Z. D.\} and Wu, \{X. M.\} and Zhuge, \{L. J.\}",

year = "2005",

month = aug,

day = "19",

doi = "10.1016/j.vacuum.2005.04.003",

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pages = "250--254",

journal = "Vacuum",

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}

TY - JOUR

T1 - Structure and photoluminescence properties of SiC films synthesized by the RF-magnetron sputtering technique

AU - Sha, Z. D.

AU - Wu, X. M.

AU - Zhuge, L. J.

PY - 2005/8/19

Y1 - 2005/8/19

N2 - SiC films were prepared by the RF-magnetron sputtering technique on P-Si substrates with the target of single crystalline SiC. The as-deposited films were annealed in the temperature range of 700-1000 °C under nitrogen ambient. The thin films have been characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). The results showed that the samples were amorphous until they were annealed at 1000 °C. Annealing temperature (Ta) has an important role in the quality of the samples. The XPS data revealed the chemical state of the samples. Photoluminescence (PL) spectra of the samples were observed in the visible range at room temperature. The origin of the PL was discussed.

AB - SiC films were prepared by the RF-magnetron sputtering technique on P-Si substrates with the target of single crystalline SiC. The as-deposited films were annealed in the temperature range of 700-1000 °C under nitrogen ambient. The thin films have been characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). The results showed that the samples were amorphous until they were annealed at 1000 °C. Annealing temperature (Ta) has an important role in the quality of the samples. The XPS data revealed the chemical state of the samples. Photoluminescence (PL) spectra of the samples were observed in the visible range at room temperature. The origin of the PL was discussed.

KW - Annealing temperature

KW - Magnetron sputtering

KW - Photoluminescence

KW - SiC films

UR - https://www.scopus.com/pages/publications/22544452747

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DO - 10.1016/j.vacuum.2005.04.003

M3 - 文章

AN - SCOPUS:22544452747

SN - 0042-207X

VL - 79

SP - 250

EP - 254

JO - Vacuum

JF - Vacuum

IS - 3-4

ER -

Structure and photoluminescence properties of SiC films synthesized by the RF-magnetron sputtering technique

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