Structure and optical and electrical properties of Li, Mg doped ZnO thin films prepared by seed induced sol-gel method

ZnO thin film and Li, Mg doped ZnO thin films were deposited on silicon substrates by sol-gel method using ZnO as seed layer. The structural, morphological and optical properties of ZnO thin films were characterized by X-ray diffractometer, field emission scanning electron microscopy and room-temperature photoluminescence. The effects of Li and Mg dopants, seed layer and spin coating times on the performance of the ZnO thin films were investigated. Optimal process conditions were obtained to prepare ZnO films. The photoluminescence properties of Li-Mg co-doped ZnO enhanced nearly five times, the NBE shifted to the short wavelength direction and the band gap increased.