Structural studies of epitaxial BaTiO3 thin film on silicon

B. Wagué; J. B. Brubach; G. Niu; G. Dong; L. Dai; P. Roy; G. Saint-Girons; P. Rojo-Romeo; Y. Robach; B. Vilquin

doi:10.1016/j.tsf.2019.137636

Structural studies of epitaxial BaTiO₃ thin film on silicon

B. Wagué
, J. B. Brubach
, G. Niu
, G. Dong
, L. Dai
, P. Roy
, G. Saint-Girons
, P. Rojo-Romeo
, Y. Robach
, B. Vilquin

电子与信息学部

École centrale de Lyon
L'orme des merisiers
Xi'an Jiaotong University

科研成果: 期刊稿件 › 文章 › 同行评审

23 引用（Scopus）

摘要

BaTiO₃ thin films (60 nm-thick) grown on SrTiO₃/Si templates have been characterized for their structural and electrical properties. The epitaxy of the BaTiO₃ film on silicon was confirmed by X-ray diffraction with good crystallinity. The temperature-dependent structural properties were checked by infrared spectroscopy in absorption mode. The films were found to remain in a single ferroelectric phase over a temperature range from 5 to 385 K. Low-temperature orthorhombic-rhombohedral phase transitions characteristic of bulk BaTiO₃ are absent in the films due to the clamping effect from the Si substrate.

源语言	英语
文章编号	137636
期刊	Thin Solid Films
卷	693
DOI	https://doi.org/10.1016/j.tsf.2019.137636
出版状态	已出版 - 1 1月 2020

访问文件

10.1016/j.tsf.2019.137636

其它文件与链接

链接到 Scopus 的出版物

引用此

@article{48ca5965e4a74064b63b825d7ec95f1f,

title = "Structural studies of epitaxial BaTiO3 thin film on silicon",

abstract = "BaTiO3 thin films (60 nm-thick) grown on SrTiO3/Si templates have been characterized for their structural and electrical properties. The epitaxy of the BaTiO3 film on silicon was confirmed by X-ray diffraction with good crystallinity. The temperature-dependent structural properties were checked by infrared spectroscopy in absorption mode. The films were found to remain in a single ferroelectric phase over a temperature range from 5 to 385 K. Low-temperature orthorhombic-rhombohedral phase transitions characteristic of bulk BaTiO3 are absent in the films due to the clamping effect from the Si substrate.",

keywords = "Epitaxy, Ferroelectricity, Infrared spectroscopy, Phonon, Radio-frequency magnetron sputtering, Silicon, Thin films",

author = "B. Wagu{\'e} and Brubach, \{J. B.\} and G. Niu and G. Dong and L. Dai and P. Roy and G. Saint-Girons and P. Rojo-Romeo and Y. Robach and B. Vilquin",

note = "Publisher Copyright: {\textcopyright} 2019",

year = "2020",

month = jan,

day = "1",

doi = "10.1016/j.tsf.2019.137636",

language = "英语",

volume = "693",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Structural studies of epitaxial BaTiO3 thin film on silicon

AU - Wagué, B.

AU - Brubach, J. B.

AU - Niu, G.

AU - Dong, G.

AU - Dai, L.

AU - Roy, P.

AU - Saint-Girons, G.

AU - Rojo-Romeo, P.

AU - Robach, Y.

AU - Vilquin, B.

PY - 2020/1/1

Y1 - 2020/1/1

N2 - BaTiO3 thin films (60 nm-thick) grown on SrTiO3/Si templates have been characterized for their structural and electrical properties. The epitaxy of the BaTiO3 film on silicon was confirmed by X-ray diffraction with good crystallinity. The temperature-dependent structural properties were checked by infrared spectroscopy in absorption mode. The films were found to remain in a single ferroelectric phase over a temperature range from 5 to 385 K. Low-temperature orthorhombic-rhombohedral phase transitions characteristic of bulk BaTiO3 are absent in the films due to the clamping effect from the Si substrate.

AB - BaTiO3 thin films (60 nm-thick) grown on SrTiO3/Si templates have been characterized for their structural and electrical properties. The epitaxy of the BaTiO3 film on silicon was confirmed by X-ray diffraction with good crystallinity. The temperature-dependent structural properties were checked by infrared spectroscopy in absorption mode. The films were found to remain in a single ferroelectric phase over a temperature range from 5 to 385 K. Low-temperature orthorhombic-rhombohedral phase transitions characteristic of bulk BaTiO3 are absent in the films due to the clamping effect from the Si substrate.

KW - Epitaxy

KW - Ferroelectricity

KW - Infrared spectroscopy

KW - Phonon

KW - Radio-frequency magnetron sputtering

KW - Silicon

KW - Thin films

UR - https://www.scopus.com/pages/publications/85075899135

U2 - 10.1016/j.tsf.2019.137636

DO - 10.1016/j.tsf.2019.137636

M3 - 文章

AN - SCOPUS:85075899135

SN - 0040-6090

VL - 693

JO - Thin Solid Films

JF - Thin Solid Films

M1 - 137636

ER -

Structural studies of epitaxial BaTiO3 thin film on silicon

摘要

访问文件

其它文件与链接

学术指纹

引用此

Structural studies of epitaxial BaTiO₃ thin film on silicon