Strain-induced anisotropic transport properties of LaBaCo2O 5.5+δ thin films on NdGaO3 substrates

Ming Liu; Qiang Zou; Chunrui Ma; Greg Collins; Shao Bo Mi; Chun Lin Jia; Haiming Guo; Hongjun Gao; Chonglin Chen

doi:10.1021/am502448k

Strain-induced anisotropic transport properties of LaBaCo₂O _5.5+δ thin films on NdGaO₃ substrates

Ming Liu
, Qiang Zou
, Chunrui Ma
, Greg Collins
, Shao Bo Mi
, Chun Lin Jia
, Haiming Guo
, Hongjun Gao
, Chonglin Chen

电子与信息学部

University of Texas at San Antonio
CAS - Institute of Physics
Xi'an Jiaotong University
CAS - Institute of Metal Research
Jülich Research Centre

科研成果: 期刊稿件 › 文章 › 同行评审

32 引用（Scopus）

摘要

Thin films of double-perovskite structural LaBaCo₂O _5.5+δ were epitaxially grown on (110) NdGaO₃ substrates by pulsed laser deposition. Microstructural studies by high-resolution X-ray diffraction and transmission electron microscopy revealed that the films have an excellent quality epitaxial structure. In addition, strong in-plane anisotropic strains were measured. Electrical transport properties of the films were characterized by an ultra-high-vacuum four-probe scanning tunneling microscopy system at different temperatures. It was found that the anisotropic in-plane strain can significantly tune the values of film resistance up to 590%.

源语言	英语
页（从-至）	8526-8530
页数	5
期刊	ACS Applied Materials and Interfaces
卷	6
期	11
DOI	https://doi.org/10.1021/am502448k
出版状态	已出版 - 11 6月 2014

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title = "Strain-induced anisotropic transport properties of LaBaCo2O 5.5+δ thin films on NdGaO3 substrates",

abstract = "Thin films of double-perovskite structural LaBaCo2O 5.5+δ were epitaxially grown on (110) NdGaO3 substrates by pulsed laser deposition. Microstructural studies by high-resolution X-ray diffraction and transmission electron microscopy revealed that the films have an excellent quality epitaxial structure. In addition, strong in-plane anisotropic strains were measured. Electrical transport properties of the films were characterized by an ultra-high-vacuum four-probe scanning tunneling microscopy system at different temperatures. It was found that the anisotropic in-plane strain can significantly tune the values of film resistance up to 590\%.",

keywords = "anisotropic, interface, thin film, transport properties",

author = "Ming Liu and Qiang Zou and Chunrui Ma and Greg Collins and Mi, \{Shao Bo\} and Jia, \{Chun Lin\} and Haiming Guo and Hongjun Gao and Chonglin Chen",

year = "2014",

month = jun,

day = "11",

doi = "10.1021/am502448k",

language = "英语",

volume = "6",

pages = "8526--8530",

journal = "ACS Applied Materials and Interfaces",

issn = "1944-8244",

publisher = "American Chemical Society",

number = "11",

}

TY - JOUR

T1 - Strain-induced anisotropic transport properties of LaBaCo2O 5.5+δ thin films on NdGaO3 substrates

AU - Liu, Ming

AU - Zou, Qiang

AU - Ma, Chunrui

AU - Collins, Greg

AU - Mi, Shao Bo

AU - Jia, Chun Lin

AU - Guo, Haiming

AU - Gao, Hongjun

AU - Chen, Chonglin

PY - 2014/6/11

Y1 - 2014/6/11

N2 - Thin films of double-perovskite structural LaBaCo2O 5.5+δ were epitaxially grown on (110) NdGaO3 substrates by pulsed laser deposition. Microstructural studies by high-resolution X-ray diffraction and transmission electron microscopy revealed that the films have an excellent quality epitaxial structure. In addition, strong in-plane anisotropic strains were measured. Electrical transport properties of the films were characterized by an ultra-high-vacuum four-probe scanning tunneling microscopy system at different temperatures. It was found that the anisotropic in-plane strain can significantly tune the values of film resistance up to 590%.

AB - Thin films of double-perovskite structural LaBaCo2O 5.5+δ were epitaxially grown on (110) NdGaO3 substrates by pulsed laser deposition. Microstructural studies by high-resolution X-ray diffraction and transmission electron microscopy revealed that the films have an excellent quality epitaxial structure. In addition, strong in-plane anisotropic strains were measured. Electrical transport properties of the films were characterized by an ultra-high-vacuum four-probe scanning tunneling microscopy system at different temperatures. It was found that the anisotropic in-plane strain can significantly tune the values of film resistance up to 590%.

KW - anisotropic

KW - interface

KW - thin film

KW - transport properties

UR - https://www.scopus.com/pages/publications/84902531980

U2 - 10.1021/am502448k

DO - 10.1021/am502448k

M3 - 文章

AN - SCOPUS:84902531980

SN - 1944-8244

VL - 6

SP - 8526

EP - 8530

JO - ACS Applied Materials and Interfaces

JF - ACS Applied Materials and Interfaces

IS - 11

ER -

Strain-induced anisotropic transport properties of LaBaCo2O 5.5+δ thin films on NdGaO3 substrates

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Strain-induced anisotropic transport properties of LaBaCo₂O _5.5+δ thin films on NdGaO₃ substrates