Simultaneously achieving large piezoelectricity, high Curie temperature and high resistivity in niobium-doped PYN-PZT piezoelectric ceramics

High-temperature piezoelectric materials require simultaneously high piezoelectric properties, high Curie temperature and high resistivity. In this study, 1mol% Nb⁵⁺ doped 0.10Pb(Yb_1/2Nb_1/2)O₃-0.42PbZrO₃-0.48PbTiO₃ (PYN-PZT) piezoelectric ceramics were prepared using the conventional solid-state reaction method. The effects of Nb⁵⁺ donor dopant on the microstructure, electrical, and electromechanical properties of PYN-PZT were systematically investigated. Compared to undoped PYN-PZT ceramics, Nb⁵⁺ doping significantly improves the piezoelectric constant d₃₃ from 437 pC/N to 512 pC/N, while maintaining a high Curie temperature of 389 °C. Additionally, 1mol% Nb⁵⁺ doped PYN-PZT ceramics exhibit a significantly enhanced high-temperature resistivity of 2.88 × 10⁷ Ω cm at 400 °C, approximately 2 orders of magnitude greater than that of undoped PYN-PZT ceramics. Temperature dependent P-E loop measurement reveals that Nb⁵⁺doping provides excellent leakage resistance up to 350 °C, effectively extending the working temperature of PYN-PZT by approximately 100 °C. The improved high-temperature performance makes Nb⁵⁺doped PYN-PZT highly suitable for the applications in high temperature environments.