Simulation investigation of effects of substrate and thermal boundary resistance on performances of AlGaN/GaN HEMTs

The temperature distributions and thermal resistances of the GaN HEMTs fabricated on different substrates (sapphire, Si, SiC and diamond) with Mo/Au interlayers were calculated and analyzed by numerical simulation. The results show that the GaN HEMT on the diamond substrate exhibits the lowest channel temperature and thermal resistance, and the thermal resistance rises with the increase of the thermal boundary resistance (TBR) for all the GaN HEMTs with the different substrate materials. Meanwhile, the high TBR (2 × 10⁻⁷ m²·K/W) severely hinders the heat exchange between the GaN layer and the substrate, which makes it difficult for the heat flux to pass through the barrier. Even diamond with high thermal conductivity can hardly reduce the channel temperature of the device. Therefore, TBR must be reduced so that the heat flux can be dissipated through a high thermal conductivity substrate. In addition, the Mo/Au interlayer generates a lower thermal boundary resistance, which has little effect on the channel temperature, thermal resistance and interfacial temperature discontinuity of GaN HEMTs.