摘要
Controlling the absorption mechanism, e.g. inverse Bremsstrahlung and resonant absorption, the emission of Si-Kα-radiation using focused femtosecond laser radiation (tp 100fs, λ 850 nm, I ≤ 20 PW/cm2) has been investigated. The emission Si-K α-radiation has been improved with double pulses, varying the delay, the energy ratio between pre- and main-pulse and the focal position. The efficiency for double-pulse-generation of Si-Kα-radiation has been increased 4 times compared to single pulse generation.
| 源语言 | 英语 |
|---|---|
| 文章编号 | 034 |
| 页(从-至) | 159-163 |
| 页数 | 5 |
| 期刊 | Journal of Physics: Conference Series |
| 卷 | 59 |
| 期 | 1 |
| DOI | |
| 出版状态 | 已出版 - 1 4月 2007 |
| 已对外发布 | 是 |
学术指纹
探究 'Si-Kα radiation generated by the interaction of femtosecond laser radiation with silicon' 的科研主题。它们共同构成独一无二的指纹。引用此
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