TY - JOUR
T1 - Self-Restoration of a Wrinkled Hf0.5Zr0.5O2 Ferroelectric Membrane
AU - Ye, Haoran
AU - He, Liqiang
AU - Wang, Zhipeng
AU - Gao, Lei
AU - Wang, Lei
AU - Zhang, Dawei
AU - Luo, Xiong
AU - Xing, Yu
AU - Zhang, Junchao
AU - Wu, Fan
AU - Yao, Honghong
AU - Lu, Nianpeng
AU - Zhou, Yichun
AU - Dong, Shuai
AU - Wang, Dong
AU - Li, Linglong
N1 - Publisher Copyright:
© 2025 American Chemical Society.
PY - 2025/4/23
Y1 - 2025/4/23
N2 - Ferroelectric oxides are generally prone to brittle deformation, which impedes their applicability in flexible devices. Using a damage-free peel-off process, we successfully synthesized wrinkled 10 nm thick membranes of zirconium-doped hafnium oxide Hf0.5Zr0.5O2 (HZO). We studied their self-restoration dynamics via in situ scanning probe microscopy. Substantial deformations were induced as the tip descended by applying and sustaining a predefined static force at the crest of the wrinkled membrane. The membrane was fully restored to its original wrinkled state within a specific force range, with no observed damage after force removal. The membrane demonstrated self-restoration even after forces exceeding 100 nN, which completely collapsed the wrinkles, highlighting the exceptional flexibility of these freestanding HZO membranes─an uncommon property among functional oxides. Combining phase-field simulations, we observed the emergence of a region exhibiting continuous variation in polarization intensity within the strained area. The formation of this specific domain structure plays a pivotal role in the self-restoration behavior of the freestanding ferroelectric membranes. This self-restoration capability is essential for the long-term stability of flexible electronic devices, such as sensors, energy harvesters, and electronic skins.
AB - Ferroelectric oxides are generally prone to brittle deformation, which impedes their applicability in flexible devices. Using a damage-free peel-off process, we successfully synthesized wrinkled 10 nm thick membranes of zirconium-doped hafnium oxide Hf0.5Zr0.5O2 (HZO). We studied their self-restoration dynamics via in situ scanning probe microscopy. Substantial deformations were induced as the tip descended by applying and sustaining a predefined static force at the crest of the wrinkled membrane. The membrane was fully restored to its original wrinkled state within a specific force range, with no observed damage after force removal. The membrane demonstrated self-restoration even after forces exceeding 100 nN, which completely collapsed the wrinkles, highlighting the exceptional flexibility of these freestanding HZO membranes─an uncommon property among functional oxides. Combining phase-field simulations, we observed the emergence of a region exhibiting continuous variation in polarization intensity within the strained area. The formation of this specific domain structure plays a pivotal role in the self-restoration behavior of the freestanding ferroelectric membranes. This self-restoration capability is essential for the long-term stability of flexible electronic devices, such as sensors, energy harvesters, and electronic skins.
KW - ferroelectric membrane
KW - flexible electronics
KW - freestanding
KW - hafnium oxide
KW - phase-field simulation
UR - https://www.scopus.com/pages/publications/105003552014
U2 - 10.1021/acsami.4c22859
DO - 10.1021/acsami.4c22859
M3 - 文章
C2 - 40226863
AN - SCOPUS:105003552014
SN - 1944-8244
VL - 17
SP - 24087
EP - 24095
JO - ACS Applied Materials and Interfaces
JF - ACS Applied Materials and Interfaces
IS - 16
ER -