TY - JOUR
T1 - Selective Epitaxy of InP on Si and Rectification in Graphene/InP/Si Hybrid Structure
AU - Niu, Gang
AU - Capellini, Giovanni
AU - Hatami, Fariba
AU - Di Bartolomeo, Antonio
AU - Niermann, Tore
AU - Hussein, Emad Hameed
AU - Schubert, Markus Andreas
AU - Krause, Hans Michael
AU - Zaumseil, Peter
AU - Skibitzki, Oliver
AU - Lupina, Grzegorz
AU - Masselink, William Ted
AU - Lehmann, Michael
AU - Xie, Ya Hong
AU - Schroeder, Thomas
N1 - Publisher Copyright:
© 2016 American Chemical Society.
PY - 2016/10/12
Y1 - 2016/10/12
N2 - The epitaxial integration of highly heterogeneous material systems with silicon (Si) is a central topic in (opto-)electronics owing to device applications. InP could open new avenues for the realization of novel devices such as high-mobility transistors in next-generation CMOS or efficient lasers in Si photonics circuitry. However, the InP/Si heteroepitaxy is highly challenging due to the lattice (∼8%), thermal expansion mismatch (∼84%), and the different lattice symmetries. Here, we demonstrate the growth of InP nanocrystals showing high structural quality and excellent optoelectronic properties on Si. Our CMOS-compatible innovative approach exploits the selective epitaxy of InP nanocrystals on Si nanometric seeds obtained by the opening of lattice-arranged Si nanotips embedded in a SiO2 matrix. A graphene/InP/Si-tip heterostructure was realized on obtained materials, revealing rectifying behavior and promising photodetection. This work presents a significant advance toward the monolithic integration of graphene/III-V based hybrid devices onto the mainstream Si technology platform.
AB - The epitaxial integration of highly heterogeneous material systems with silicon (Si) is a central topic in (opto-)electronics owing to device applications. InP could open new avenues for the realization of novel devices such as high-mobility transistors in next-generation CMOS or efficient lasers in Si photonics circuitry. However, the InP/Si heteroepitaxy is highly challenging due to the lattice (∼8%), thermal expansion mismatch (∼84%), and the different lattice symmetries. Here, we demonstrate the growth of InP nanocrystals showing high structural quality and excellent optoelectronic properties on Si. Our CMOS-compatible innovative approach exploits the selective epitaxy of InP nanocrystals on Si nanometric seeds obtained by the opening of lattice-arranged Si nanotips embedded in a SiO2 matrix. A graphene/InP/Si-tip heterostructure was realized on obtained materials, revealing rectifying behavior and promising photodetection. This work presents a significant advance toward the monolithic integration of graphene/III-V based hybrid devices onto the mainstream Si technology platform.
KW - III-V compounds
KW - graphene
KW - monolithic integration
KW - nanoheteroepitaxy
KW - rectification
UR - https://www.scopus.com/pages/publications/84991584992
U2 - 10.1021/acsami.6b09592
DO - 10.1021/acsami.6b09592
M3 - 文章
AN - SCOPUS:84991584992
SN - 1944-8244
VL - 8
SP - 26948
EP - 26955
JO - ACS Applied Materials and Interfaces
JF - ACS Applied Materials and Interfaces
IS - 40
ER -