Schottky x-ray detectors based on a bulk β-Ga2O3 substrate

Xing Lu; Leidang Zhou; Liang Chen; Xiaoping Ouyang; Bo Liu; Jun Xu; Huili Tang

doi:10.1063/1.5020178

Schottky x-ray detectors based on a bulk β-Ga₂O₃ substrate

Xing Lu
, Leidang Zhou
, Liang Chen
, Xiaoping Ouyang
, Bo Liu
, Jun Xu
, Huili Tang

South China University of Technology
Xi'an Jiaotong University
Northwest Institute of Nuclear Technology
Tongji University

科研成果: 期刊稿件 › 文章 › 同行评审

98 引用（Scopus）

摘要

β-Ga₂O₃ Schottky barrier diodes (SBDs) have been fabricated on a bulk (100) β-Ga₂O₃ substrate and tested as X-ray detectors in this study. The devices exhibited good rectification properties, such as a high rectification ratio and a close-to-unity ideality factor. A high photo-to-dark current ratio exceeding 800 was achieved for X-ray detection, which was mainly attributed to the low reverse leakage current in the β-Ga₂O₃ SBDs. Furthermore, transient response of the β-Ga₂O₃ X-ray detectors was investigated, and two different detection mechanisms, photovoltaic and photoconductive, were identified. The results imply the great potential of β-Ga₂O₃ based devices for X-ray detection.

源语言	英语
文章编号	103502
期刊	Applied Physics Letters
卷	112
期	10
DOI	https://doi.org/10.1063/1.5020178
出版状态	已出版 - 5 3月 2018
已对外发布	是

联合国可持续发展目标

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可持续发展目标 7 经济适用的清洁能源

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title = "Schottky x-ray detectors based on a bulk β-Ga2O3 substrate",

abstract = "β-Ga2O3 Schottky barrier diodes (SBDs) have been fabricated on a bulk (100) β-Ga2O3 substrate and tested as X-ray detectors in this study. The devices exhibited good rectification properties, such as a high rectification ratio and a close-to-unity ideality factor. A high photo-to-dark current ratio exceeding 800 was achieved for X-ray detection, which was mainly attributed to the low reverse leakage current in the β-Ga2O3 SBDs. Furthermore, transient response of the β-Ga2O3 X-ray detectors was investigated, and two different detection mechanisms, photovoltaic and photoconductive, were identified. The results imply the great potential of β-Ga2O3 based devices for X-ray detection.",

author = "Xing Lu and Leidang Zhou and Liang Chen and Xiaoping Ouyang and Bo Liu and Jun Xu and Huili Tang",

note = "Publisher Copyright: {\textcopyright} 2018 Author(s).",

year = "2018",

month = mar,

day = "5",

doi = "10.1063/1.5020178",

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volume = "112",

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TY - JOUR

T1 - Schottky x-ray detectors based on a bulk β-Ga2O3 substrate

AU - Lu, Xing

AU - Zhou, Leidang

AU - Chen, Liang

AU - Ouyang, Xiaoping

AU - Liu, Bo

AU - Xu, Jun

AU - Tang, Huili

PY - 2018/3/5

Y1 - 2018/3/5

N2 - β-Ga2O3 Schottky barrier diodes (SBDs) have been fabricated on a bulk (100) β-Ga2O3 substrate and tested as X-ray detectors in this study. The devices exhibited good rectification properties, such as a high rectification ratio and a close-to-unity ideality factor. A high photo-to-dark current ratio exceeding 800 was achieved for X-ray detection, which was mainly attributed to the low reverse leakage current in the β-Ga2O3 SBDs. Furthermore, transient response of the β-Ga2O3 X-ray detectors was investigated, and two different detection mechanisms, photovoltaic and photoconductive, were identified. The results imply the great potential of β-Ga2O3 based devices for X-ray detection.

AB - β-Ga2O3 Schottky barrier diodes (SBDs) have been fabricated on a bulk (100) β-Ga2O3 substrate and tested as X-ray detectors in this study. The devices exhibited good rectification properties, such as a high rectification ratio and a close-to-unity ideality factor. A high photo-to-dark current ratio exceeding 800 was achieved for X-ray detection, which was mainly attributed to the low reverse leakage current in the β-Ga2O3 SBDs. Furthermore, transient response of the β-Ga2O3 X-ray detectors was investigated, and two different detection mechanisms, photovoltaic and photoconductive, were identified. The results imply the great potential of β-Ga2O3 based devices for X-ray detection.

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U2 - 10.1063/1.5020178

DO - 10.1063/1.5020178

M3 - 文章

AN - SCOPUS:85043483247

SN - 0003-6951

VL - 112

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

M1 - 103502

ER -

Schottky x-ray detectors based on a bulk β-Ga2O3 substrate

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Schottky x-ray detectors based on a bulk β-Ga₂O₃ substrate