@inproceedings{4496deb744bb4e7c8523a98153aa4983,
title = "RTN-based defect tracking technique: Experimentally probing the spatial and energy profile of the critical filament region and its correlation with HfO2RRAM switching operation and failure mechanism",
abstract = "For the first time, an RTN based defect tracking technique has been developed that can monitor the defect movement and filament alteration in RRAM devices. Critical filament region has been identified during switching operation at various conditions and new endurance failure mechanism is revealed. This technique provides a useful tool for RRAM technology development.",
author = "Z. Chai and J. Ma and W. Zhang and B. Govoreanu and E. Simoen and Zhang, \{J. F.\} and Z. Ji and R. Gao and G. Groeseneken and M. Jurczak",
note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 36th IEEE Symposium on VLSI Technology, VLSI Technology 2016 ; Conference date: 13-06-2016 Through 16-06-2016",
year = "2016",
month = sep,
day = "21",
doi = "10.1109/VLSIT.2016.7573402",
language = "英语",
series = "Digest of Technical Papers - Symposium on VLSI Technology",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2016 IEEE Symposium on VLSI Technology, VLSI Technology 2016",
}