TY - JOUR
T1 - Room Temperature Quantum Anomalous Hall Insulator in a Honeycomb-Kagome Lattice, Ta2O3, with Huge Magnetic Anisotropy Energy
AU - Li, Ping
AU - Ma, Yue
AU - Zhang, Yun
AU - Guo, Zhi Xin
N1 - Publisher Copyright:
© 2021 American Chemical Society.
PY - 2021/4/27
Y1 - 2021/4/27
N2 - The quantum anomalous Hall (QAH) effect has attracted enormous attention since it can induce topologically protected conducting edge states in an intrinsic insulating material. For practical quantum applications, the main obstacle is the non-existent room temperature QAH systems, especially with both large topological band gap and robust ferromagnetic order. Here, based on first-principles calculations, we predict the realization of the room temperature QAH effect in a two-dimensional honeycomb-Kagome (HK) lattice, Ta2O3, which is a QAH insulator with a non-zero Chern number of C =-1. We further found that the non-trivial topological properties are robust against the biaxial strain, where the band gap increases from 80.5 up to 454.8 meV with the strain increasing from 0 to 6%. Moreover, we find that Ta2O3 has a huge magnetic anisotropy energy (42.8 meV) and unusual high Curie temperature (788 K). The robust topological and magnetic properties make Ta2O3 have great application potentials in room temperature spintronics and nanoelectronics.
AB - The quantum anomalous Hall (QAH) effect has attracted enormous attention since it can induce topologically protected conducting edge states in an intrinsic insulating material. For practical quantum applications, the main obstacle is the non-existent room temperature QAH systems, especially with both large topological band gap and robust ferromagnetic order. Here, based on first-principles calculations, we predict the realization of the room temperature QAH effect in a two-dimensional honeycomb-Kagome (HK) lattice, Ta2O3, which is a QAH insulator with a non-zero Chern number of C =-1. We further found that the non-trivial topological properties are robust against the biaxial strain, where the band gap increases from 80.5 up to 454.8 meV with the strain increasing from 0 to 6%. Moreover, we find that Ta2O3 has a huge magnetic anisotropy energy (42.8 meV) and unusual high Curie temperature (788 K). The robust topological and magnetic properties make Ta2O3 have great application potentials in room temperature spintronics and nanoelectronics.
KW - first-principles calculations
KW - huge magnetic anisotropy energy
KW - quantum anomalous Hall effect
KW - room temperature
KW - topological properties
UR - https://www.scopus.com/pages/publications/85105057951
U2 - 10.1021/acsaelm.1c00085
DO - 10.1021/acsaelm.1c00085
M3 - 文章
AN - SCOPUS:85105057951
SN - 2637-6113
VL - 3
SP - 1826
EP - 1833
JO - ACS Applied Electronic Materials
JF - ACS Applied Electronic Materials
IS - 4
ER -