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Room temperature bonding of GaN on diamond by using Mo/Au nano-adhesion layer

  • Xi'an Jiaotong University

科研成果: 书/报告/会议事项章节会议稿件同行评审

1 引用 (Scopus)

摘要

For solving the heat dissipation of high-power GaN devices, GaN was bonded on diamond at room temperature by using Mo/Au nano-adhesion layer. For a bonded GaN-on-diamond sample, the voidage is less than 3.0%, and the tensile strength reaches 6.8 MPa.

源语言英语
主期刊名Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
出版商Institute of Electrical and Electronics Engineers Inc.
22
页数1
ISBN(电子版)9784904743072
DOI
出版状态已出版 - 5月 2019
活动6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019 - Kanazawa, Ishikawa, 日本
期限: 21 5月 201925 5月 2019

出版系列

姓名Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019

会议

会议6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
国家/地区日本
Kanazawa, Ishikawa
时期21/05/1925/05/19

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