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Reviving the “Schottky” Barrier for Flexible Polymer Dielectrics with a Superior 2D Nanoassembly Coating

  • Boya Zhang
  • , Jingjing Liu
  • , Ming Ren
  • , Chao Wu
  • , Thomas J. Moran
  • , Songshan Zeng
  • , Sonia E. Chavez
  • , Zaili Hou
  • , Zongze Li
  • , Anna Marie LaChance
  • , T. Richard Jow
  • , Bryan D. Huey
  • , Yang Cao
  • , Luyi Sun
  • University of Connecticut
  • Ccdc Army Research Laboratory

科研成果: 期刊稿件文章同行评审

119 引用 (Scopus)

摘要

The organic insulator–metal interface is the most important junction in flexible electronics. The strong band offset of organic insulators over the Fermi level of electrodes should theoretically impart a sufficient impediment for charge injection known as the Schottky barrier. However, defect formation through Anderson localization due to topological disorder in polymers leads to reduced barriers and hence cumbersome devices. A facile nanocoating comprising hundreds of highly oriented organic/inorganic alternating nanolayers is self-coassembled on the surface of polymer films to revive the Schottky barrier. Carrier injection over the enhanced barrier is further shunted by anisotropic 2D conduction. This new interface engineering strategy allows a significant elevation of the operating field for organic insulators by 45% and a 7× improvement in discharge efficiency for Kapton at 150 °C. This superior 2D nanocoating thus provides a defect-tolerant approach for effective reviving of the Schottky barrier, one century after its discovery, broadly applicable for flexible electronics.

源语言英语
期刊论文编号2101374
期刊Advanced Materials
33
34
DOI
出版状态已出版 - 26 8月 2021
已对外发布

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