TY - GEN
T1 - Review of Encapsulation Insulation Reliability and Failure Mechanism for High Voltage Power Electronics Modules
AU - Zhang, Boya
AU - Li, Xingwen
AU - Li, Kaixuan
N1 - Publisher Copyright:
© ICREPEC 2022.All rights reserved
PY - 2022
Y1 - 2022
N2 - Power electronics modules have been widely used in flexible HVDC power transmission, new energy power generation, high-speed trains, electric vehicles, etc. And they have been developing towards higher voltage level, higher power density, faster switching speed and higher working temperature. Therefore, the problem of encapsulation insulation reliability becomes more and more prominent. In this paper, the insulation structure, materials and requirements of the encapsulation system in currently widely used bond-wired high voltage Si-based IGBT modules are analyzed. The dielectric and aging characteristics of the encapsulation insulation materials are summarized. Then, the partial discharge characteristics of the encapsulation structure and the failure mechanism of interfacial insulation as well as its influencing factors are analyzed. On this basis, methods to improve the reliability of encapsulation insulation are summarized. Finally, towards the development trend of SiC-based semiconductor devices in the future, the main difficulties and challenges in the encapsulation insulation of the new generation high-voltage power electronics modules are pointed out and related problems are prospected.
AB - Power electronics modules have been widely used in flexible HVDC power transmission, new energy power generation, high-speed trains, electric vehicles, etc. And they have been developing towards higher voltage level, higher power density, faster switching speed and higher working temperature. Therefore, the problem of encapsulation insulation reliability becomes more and more prominent. In this paper, the insulation structure, materials and requirements of the encapsulation system in currently widely used bond-wired high voltage Si-based IGBT modules are analyzed. The dielectric and aging characteristics of the encapsulation insulation materials are summarized. Then, the partial discharge characteristics of the encapsulation structure and the failure mechanism of interfacial insulation as well as its influencing factors are analyzed. On this basis, methods to improve the reliability of encapsulation insulation are summarized. Finally, towards the development trend of SiC-based semiconductor devices in the future, the main difficulties and challenges in the encapsulation insulation of the new generation high-voltage power electronics modules are pointed out and related problems are prospected.
KW - electrical tree
KW - high frequency
KW - high slew rate
KW - high temperature
KW - insulation degradation
KW - silicone gel
UR - https://www.scopus.com/pages/publications/85153526661
M3 - 会议稿件
AN - SCOPUS:85153526661
T3 - ICREPEC 2022 - Proceedings of the 8th International Conference on Reliability of Electrical Products and Electrical Contacts
SP - 39
EP - 46
BT - ICREPEC 2022 - Proceedings of the 8th International Conference on Reliability of Electrical Products and Electrical Contacts
A2 - Wang, Jingqin
A2 - Zhao, Jingying
PB - International Academic Publishers
T2 - 8th International Conference on Reliability of Electrical Products and Electrical Contacts, ICREPEC 2022
Y2 - 18 November 2022 through 20 November 2022
ER -