Retraction:Light-controlled resistive switching memory of multiferroic BiMnO3 nanowire arrays

Bai Sun; Chang Ming Li

doi:10.1039/c4cp04901b

Retraction:Light-controlled resistive switching memory of multiferroic BiMnO₃ nanowire arrays

Bai Sun
, Chang Ming Li

Southwest University

科研成果: 期刊稿件 › 文章 › 同行评审

86 引用（Scopus）

摘要

A multiferroic BiMnO₃ nanowire array was prepared using a hydrothermal process and its resistive switching memory behaviors were further investigated. The prominent ferroelectricity can be well controlled by white-light illumination, thus offering an excellent light-controlled resistive switching memory device using a Ag/BiMnO₃/Ti structure at room temperature.

源语言	英语
页（从-至）	6718-6721
页数	4
期刊	Physical Chemistry Chemical Physics
卷	17
期	10
DOI	https://doi.org/10.1039/c4cp04901b
出版状态	已出版 - 14 3月 2015
已对外发布	是

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10.1039/c4cp04901b

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abstract = "A multiferroic BiMnO3 nanowire array was prepared using a hydrothermal process and its resistive switching memory behaviors were further investigated. The prominent ferroelectricity can be well controlled by white-light illumination, thus offering an excellent light-controlled resistive switching memory device using a Ag/BiMnO3/Ti structure at room temperature.",

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AB - A multiferroic BiMnO3 nanowire array was prepared using a hydrothermal process and its resistive switching memory behaviors were further investigated. The prominent ferroelectricity can be well controlled by white-light illumination, thus offering an excellent light-controlled resistive switching memory device using a Ag/BiMnO3/Ti structure at room temperature.

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Retraction:Light-controlled resistive switching memory of multiferroic BiMnO3 nanowire arrays

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Retraction:Light-controlled resistive switching memory of multiferroic BiMnO₃ nanowire arrays