@inproceedings{8bfc8011af7048bfb4e61842dea18e0a,
title = "Resonant Gate Driver for High Speed GaN HMET with dV/dt Control",
abstract = "With the increase of switching frequency, high power density converters require extremely urgent requirements for low power loss, high ring suppression and EMI optimization for the drivers. This work proposes a novel resonant gate driver designed for high frequency E-mode GaN HEMT power devices that can flexibly online configure the power device's turn-on and turn-off dV/dt. DV/dt can change by more than 6 times with the help of bias of auxiliary transistors, respectively. The calculated data is provided to optimize the efficiency and EMI noise. Meanwhile the topology can reduce the sensitivity of gate parasitic inductance to avoid incorrect operation. These operations of the proposed resonant gate driver are verified by utilizing 100V GaN HEMT.",
keywords = "GaN HMET, dV/dt control, resonant gate driver",
author = "Yuhao Xiong and Zhuoqi Guo and Zhongming Xue and Li Dong and Bingjun Tang and Liu Xingzhi and Zheng Ke and Li Geng",
note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 2021 IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2021 ; Conference date: 24-11-2021 Through 26-11-2021",
year = "2021",
doi = "10.1109/ICTA53157.2021.9661857",
language = "英语",
series = "2021 IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2021",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "232--233",
booktitle = "2021 IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2021",
}